研究了退火对磁控溅射Co/Cu多层膜微观结构和磁性能的影响.用扫描电子显微镜(SEM),透射电子显微镜(TEM)观察了沉积态及在不同温度退火后Co/Cu多层膜表面及截面的显微组织,用能谱仪(EDS)分析了退火后Co/Cu多层膜截面的元素分布,用综合物性测量系统(PPMS)对Co/Cu多层膜的磁滞回线进行了测量.表面显微组织的观察结果表明退火温度低于450 ℃时,多层膜表面形貌变化不大,均是由细小的晶粒组成.退火温度高于该温度后,随退火温度的升高,晶粒迅速长大.截面显微组织的观察结果和元素分布的测试结果表明,磁控溅射的Co/Cu多层膜内有大量柱状晶,随退火温度升高柱状晶长大.当退火温度达到600℃后,多层膜内的层状结构被破坏.磁滞回线的测量结果表明,退火温度低于400℃时,Co/Cu多层膜的磁性能变化不大,退火温度高于该温度后,随退火温度升高,矫顽力迅速增大.
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