用中频反应磁控溅射技术制备了Al2O3:Ce3+的非晶薄膜.XPS监测显示,薄膜中有Ce3+生成.这些薄膜的光致发光峰是在374 nm附近,它来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁.发光强度强烈地依赖于薄膜的掺杂浓度,但发光峰位置不随掺杂浓度而变化.Ce3+含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的.薄膜试样的晶体结构应用X射线衍射分析.俄歇电子谱用于对薄膜材料的化学组分进行定性分析.发射纯蓝光的Al2O3:Ce3+非晶薄膜在平板显示等领域有着广泛的潜在应用前景.
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