采用冷壁装置化学气相沉积(CVD)制备纳米碳管,以乙炔(C2H2)为碳源气体,研究了2种催化剂(镍、铁)、3种基底、3种稀释气体、3种稀释气体和碳源气体流量比以及温度对CVD法生长纳米碳管的影响,用SEM和TEM分析了产物的形貌.结果表明,镍催化活性高于铁的催化活性.与石墨和纯铁基底相比,以单晶硅基底生长的纳米碳管纯度更高,管壁更干净.3种稀释气体和碳源气体流量比(2/1、10/1、19/1)中,以流量比为10/1时生长纳米碳管效果最好.3种稀释气体(氨气、氢气、氮气)中,以氨气最好.随着生长温度的升高,催化剂的活性提高,有利于碳的有序排列,但生长的碳纳米管直径增大.当基底为单晶硅、催化剂镍膜厚度为20nm、氨气气氛、生长温度为850℃时,得到了近似定向生长的纳米碳管.
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