研究了一种简化预处理辅助化学镀工艺制备Cu包覆TiC复合粉末.利用场发射扫描电子显微镜和能谱仪分析了原始TiC粉末,预处理之后的TiC粉末,Cu包覆TiC复合粉末的表面形貌和成分,同时也阐述了Cu镀层的生长机理.结果表明,经过简化预处理之后的TiC出现了很多表面缺陷,Cu能够均匀的包覆在TiC颗粒表面.其生长机理如下:经过预处理之后的TiC出现很多表面缺陷,成为化学镀过程中的活性点;化学镀过程中,Cu在TiC表面的各个缺陷处形核长大;Cu与Cu之间相互接触相互作用形成密集的网状结构最终形成致密的Cu镀层.
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