用磁控溅射技术在钢基片上沉积出具有T区结构的TiB2薄膜,研究基片偏压对薄膜的影响.使用X射线衍射技术和扫描电镜分析薄膜的特性.发现在本研究工艺条件下,所有的薄膜均呈(001)晶面择优生长.当基片偏压在-50 V时,薄膜的硬度为50 GPa,抗塑性变形的能力为0.65 GPa.加大基片偏压,导致薄膜晶粒尺寸减小,同时薄膜的硬度和抗塑性变形的能力也下降.扫描电镜分析显示,基片温度对T区结构的影响是明显的,提高基片温度,当Ts/Tm=0.18时.薄膜中出现"等轴"结构.
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