结合Landau-Devonshire自由能理论和晶格模型,研究了PbZr1xTixO3 (PZT)/SrTiO3 (STO)复合薄膜中PZT和STO厚度对铁电隧道结极化强度、电导和隧穿电阻等的影响.模拟结果表明,随着层数增加,极化强度增大；平均极化强度随着PZT厚度增加而增强,随着STO厚度增加而减弱；随着PZT和STO厚度增加,电导减小,隧穿电阻率增加；当厚度变化相同时,PZT引起电导的变化大,隧穿电阻率变化小.考虑薄膜面积的影响,当薄膜面积从无限大变成有限大时,极化强度、电导和隧穿电阻均减小.
参考文献
| [1] | Gajek M;Bibes M;Fusil S;Bouzehouane K;Fontcuberta J;Barthelemy AE;Fert A .Tunnel junctions with multiferroic barriers[J].Nature materials,2007(4):296-302. |
| [2] | Ramesh R;Spaldin NA .Multiferroics: progress and prospects in thin films[J].Nature materials,2007(1):21-29. |
| [3] | Garcia V;Fusil S;Bouzehouane K et al.Giant tunnel electroresistance for non-destructive readout of ferroelectricstates[J].Nature,2009,460:81-84. |
| [4] | Yang F;Tang MH;Ye Z;Zhou YC;Zheng XJ;Tang JX;Zhang JJ;He J .Eight logic states of tunneling magnetoelectroresistance in multiferroic tunnel junctions[J].Journal of Applied Physics,2007(4):44504-1-44504-5-0. |
| [5] | 韩立仁,邓湘云,杨仁波,张艳杰,谭忠文,杨学良,李德军.电场对（Ba0.90Ca0.10）TiO3陶瓷铁电性的影响[J].功能材料,2011(12):2245-2248. |
| [6] | 李紫源,何子均,肖定全,吴文娟,朱建国.钙钛矿型低铅压电陶瓷的制备与性能研究[J].功能材料,2011(10):1869-1872. |
| [7] | 柳听前,林啸,周志东,程璇,张颖.多元系（1-x）PZT-x（0.2PFN-0.2PZN-0.6PNN）铁电陶瓷的微结构和性能[J].功能材料,2011(07):1219-1221,1226. |
| [8] | 袁娜,刘军,刘文秋,李美亚,赵兴中.Ce、V共掺杂BiFeO3多铁薄膜及其电性能研究[J].功能材料,2011(03):421-424. |
| [9] | 朱信华,宋晔,杭启明,朱健民,周舜华,刘治国.纳米结构PZT铁电膜的制备及其表征[J].功能材料,2010(11):1959-1962. |
| [10] | Gruverman, A;Wu, D;Lu, H;Wang, Y;Jang, HW;Folkman, CM;Zhuravlev, MY;Felker, D;Rzchowski, M;Eom, CB;Tsymbal, EY .Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale[J].Nano letters,2009(10):3539-3543. |
| [11] | Burton J D;Tsymbal E Y .A giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface[J].Physical Review Letters,2011,106:1572031157203-1572031157204. |
| [12] | Daniel Pantel;Haidong Lu;Silvana Goetze;Peter Werner;Dong Jik Kim;Alexei Gruverman;Dietrich Hesse;Marin Alexe .Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr_(0.2)Ti_(0.8))O_(3) barriers[J].Applied physics letters,2012(23):232902-1-232902-4. |
| [13] | M. Ye. Zhuravlev;Y. Wang;S. Maekawa;E. Y. Tsymbal .Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier[J].Applied physics letters,2009(5):052902-1-052902-3. |
| [14] | Wu Yinzhong;Ju Sheng;Li Zhenya .Effects of electrodes and space charges on the tunneling electroresistance in the ferroelectric tunnel junction with a SrTiO3/BaTiO3 composite barrier[J].Applied Physics Letters,2010,96:252905-1-252905-3. |
| [15] | D. Pantel;S. Goetze;D. Hesse .Reversible electrical switching of spin polarization in multiferroic tunnel junctions[J].Nature materials,2012(4):289-293. |
| [16] | Kenji Natori;Daijiro Otani;Nobuyuki Sano .Thickness dependence of the effective dielectric constant in a thin film capacitor[J].Applied physics letters,1998(1/6):632-634. |
| [17] | Wang Xingyuan;Wang Yinglong;Yang Rongjia .Lattice model for strained nanoscale ferroelectric capacitors:Investigation on fundamental size limits in ferroelectricity[J].Applied Physics Letters,2009,95:142910-1-142910-3. |
| [18] | A. T. Bollinger;G. Dubuis;J. Yoon;D. Pavuna;J. Misewich;I. Bozovic .Superconductor-insulator transition in La_(2-x)Sr_xCuO_4 at the pair quantum resistance[J].Nature,2011(Apr.28 TN.7344):458-460. |
| [19] | Ashcroft N W;Mermin N D.Solid state physics[M].New York:Saunders College,1976:340-350. |
| [20] | Duke C B.Tunneling in solids[M].New York:Michigan University,1969:60-70. |
| [21] | Nonlinear electric field dependence of piezoresponse in epitaxial ferroelectric lead zirconate titanate thin films[J].Journal of Applied Physics,2003(8):5147-5152. |
| [22] | Pertsev NA.;Kukhar VG.;Kohlstedt H.;Waser R. .Phase diagrams and physical properties of single-domain epitaxial Pb(Zr1-xTix)O-3 thin films - art. no. 054107[J].Physical review, B. Condensed matter and materials physics,2003(5):4107-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%