The present understanding of diamond heteroepitaxy by bias-enhanced chemicalvapour deposition on technologically relevant substrate materials is briefly re vi(wed.First the early stages of diamond nucleation and the diamond film growth as wellas influences of various deposition conditions are described. Then the results of mi-croscopic investigations of the structure of interfaces and of grain boundaries aresummarized.
参考文献
| [1] | H. Verhoeven;A. Fl#ter;H. Reiβ .Influence of the microstructure on the thermal properties of thin polycrystalline diamond films[J].Applied physics letters,1997(9/12):1329-1331. |
| [2] | H Gittler;A Floter;E Kohn;P. Gluche, X. Jiang, C.P. Klages, G. Dollinger, A. Bergmaier. D.Wittorf W. Jager.Evaluation of Semiconducting CVD Diamond Films for Electronic and Sensor Applications[A].Wiley-VCH, Weinheim,1999:189. |
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