材料期刊网

Room-temperature 1.54 mum photoluminescence (PL) is observed from Er-doped Si-rich SiO2 (SiO2:Si:Er) films deposited by using the magnetron sputtering technique. To determine the optimum Si content in the SiO2:Si:Er films, the percentage area of the Si target in the composite SiO2-Si-Er target was changed from 0, to 10%, 20% and 30%. The percentage area of the Er target was fixed at 1%. It is found that the optimum annealing temperatures for Er3+ luminescence intensities are 900 degreesC for the SiO2:Er film and 900, 800 and 700 degreesC for the SiO2:Si:Er films containing 10%, 20% and 30% excess-Si (percentage areas of Si target), respectively The SiO2:Si:Er film containing 20% excess-Si and annealed at 800 degrees C has the most intense FL.