材料期刊网

本文用表面光反射,电化学库仑还原、扫描和透射电子显微镜研究了经Cr、Ta和惰性气体离子注入后的高纯铜,暴露在含H_2S大气中的失泽行为。暴露试验是在H_2S浓度为0.006—6VPM,25℃和100％RH条件下进行的。结果表明,Cr、Ta离子注入显著地提高了铜的抗失泽能力,Xe离子注入效果较小,而Ar离子注入无改进效果。阴极还原曲线显示经Cr、Ta离子注入的试样上形成的失泽膜,比未经离子注入铜上形成的膜薄,其结构组成亦不同。电子衍射结构分析和扫描电镜(附WDAX)分析进一步证明,Cr离子注入抑制了铜表面膜中金属硫化物的形成。

The effect of Cr, Ta and inert gas ion implantation on the tarnishing resistance of high purity copper in hydrogen sulphide containing atmospheres has been studied using surface reflectance measurements, coulometrie reduction of surface films, scanning electron microscopy and wavelength dispersive analysis of X-rays. The exposure tests were conducted in air containing different levels of H_2S covering the range 0.006 to 6 VPM at 25℃ and 100％RH. Implantation of Cr and Ta markedly improves the tarnishing resistance of copper, Xe implantation gives a small improvement and Ar implantation has no effect. Coulometric reduction demonstrates that samples implanted with Cr and Ta have thinner tarnish films and that the composition of these films is different from that formed on unimplantedcopper. Seanningeteetron microscopy combined with WDAX analysis indicates that Cr implantation suppresses the formation of metallic sulphides in tarnish films on copper.