材料期刊网

参考文献

{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用溶液浸渍法在ITO导电玻璃表面的多孔TiO2薄膜上沉积了FeS2薄膜.使用Fe2O3粉末保护裸露在外的ITO导电膜在硫气氛中热处理后,制得了FeS2/TiO2复合薄膜.应用B531/H数显测厚指示表、数字式四探针测试仪、XJCM-8太阳电池测试仪等研究了FeS2/TiO2复合薄膜的厚度、ITO导电玻璃的电阻率以及FeS2/TiO2复合薄膜的光电性能.结果表明:此方法制得的FeS2/TiO2复合薄膜具有良好的光电性能;且ITO导电膜的电阻率变化较小.因而适宜制备色素增感太阳能电池(DSSC).","authors":[{"authorName":"张晨宁","id":"0de06f3d-c208-4206-8647-fd796fead4fa","originalAuthorName":"张晨宁"},{"authorName":"胡志强","id":"6ccb5cff-f769-46d6-b682-53135b179962","originalAuthorName":"胡志强"},{"authorName":"刘丽红","id":"d117a1ed-0d9c-4b72-a91b-c6f408c8664b","originalAuthorName":"刘丽红"},{"authorName":"于仙仙","id":"f6a08b56-20c9-4b2f-8f55-96a5ac43cbc8","originalAuthorName":"于仙仙"},{"authorName":"高岩","id":"561991b0-0c43-485d-bf93-a31b58e1d7a3","originalAuthorName":"高岩"},{"authorName":"金子正治","id":"4a05501e-2f48-429c-b6fe-cc321d6bc928","originalAuthorName":"金子正治"},{"authorName":"奥谷昌之","id":"58aaf0f9-5c70-4afb-bc17-f30304f3238b","originalAuthorName":"奥谷昌之"}],"doi":"10.3969/j.issn.1007-4252.2007.02.008","fpage":"139","id":"8e07ad32-c25e-4e9b-bbe0-67483fe6c379","issue":"2","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"56c9bda7-81ba-4029-9bf6-1d943ab7c05c","keyword":"溶胶凝胶法","originalKeyword":"溶胶凝胶法"},{"id":"ef1b8a78-c7a0-4f1a-8423-1c7f57de9797","keyword":"粉末涂敷法","originalKeyword":"粉末涂敷法"},{"id":"26e6bcc4-dc1f-4214-9480-16a396da3a61","keyword":"溶液浸渍法","originalKeyword":"溶液浸渍法"},{"id":"6f78e24e-608d-471e-b324-a1b414d9d6a2","keyword":"FeS2/TiO2复合薄膜","originalKeyword":"FeS2/TiO2复合薄膜"},{"id":"c72921d6-e2b2-49b8-99a0-ecf1208423ff","keyword":"DSSC电池","originalKeyword":"DSSC电池"}],"language":"zh","publisherId":"gnclyqjxb200702008","title":"FeS2/TiO2复合薄膜光电性能","volume":"13","year":"2007"},{"abstractinfo":"研究了不同热硫化条件下用纯Fe膜反应形成的FeS2多晶薄膜成分、结晶形态和电阻率的变化规律结果表明,在400℃等温20～30h时,生成的FeS2比较充分,薄膜中的Fe、S含量接近FeS2计量成分随硫化温度升高,FeS2晶粒明显增大,电阻率显著上升,当在400 ℃硫化充分形成FeS2晶粒后,继续延长等温时间对组织形态无明显影响.","authors":[{"authorName":"孟亮","id":"7a44d50e-ecac-40b0-86dc-a1d61389c09d","originalAuthorName":"孟亮"},{"authorName":"黄伟","id":"a0c0da40-dd5d-4d3e-a587-f0549003fd26","originalAuthorName":"黄伟"},{"authorName":"涂江平","id":"120f5a88-40ff-406a-b4fb-32f7818060a1","originalAuthorName":"涂江平"},{"authorName":"刘茂森","id":"33a45663-8a34-4711-8c95-3520b42811ce","originalAuthorName":"刘茂森"}],"doi":"10.3321/j.issn:1005-3093.2000.04.009","fpage":"379","id":"6f0ff63d-4191-47b3-9eef-3cde4400de82","issue":"4","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"d3d53517-1817-44fa-9965-f89471e0aca3","keyword":"FeS2","originalKeyword":"FeS2"},{"id":"b30ed578-4618-4888-9f5b-42551b4ca3e2","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"cc117fce-0c7e-4fcc-97c1-364c2ddbdf26","keyword":"制备","originalKeyword":"制备"},{"id":"23e2dcab-ec0d-43ab-a0bd-a91bae36fc5e","keyword":"性能","originalKeyword":"性能"}],"language":"zh","publisherId":"clyjxb200004009","title":"FeS2薄膜的制备和性能","volume":"14","year":"2000"},{"abstractinfo":"用Fe膜硫化法制备了FeS2薄膜,分析了基底对FeS2薄膜晶体结构和位向分布的影响.结果表明,改变基底晶体的类型能够在一定程度上控制FeS2薄膜的晶体位向分布.FeS2薄膜在Si(100)、Si(111)和Al基底上可获得(200)方向的择优取向,在TiO2基底上可同时获得(200)及(220)择优取向,非晶玻璃基底对位向分布影响不明显.不同的基底与Fe薄膜的界面错配度不同,可改变薄膜晶体位向的分布,导致晶格畸变程度和晶粒尺寸的变化.当基底为非晶结构或界面的错配度较大时,FeS2晶体的取向分布主要受表面能和晶粒优先生长方向的控制,薄膜具有较小的晶格畸变和较细的晶粒;当基底为晶态并且界面错配度较小时,FeS2晶体取向的分布除受表面能及晶粒优先生长方向控制外,还受界面应变能的控制,此时薄膜易形成较大的晶格畸变和粗晶粒.","authors":[{"authorName":"刘艳辉","id":"b6bec0ab-0622-4cbd-b609-3b73ec01b13d","originalAuthorName":"刘艳辉"},{"authorName":"孟亮","id":"765f19f6-73ec-4a54-94ec-aa855ec3623c","originalAuthorName":"孟亮"},{"authorName":"张秀娟","id":"d3e1301f-89c5-48c2-925d-7d4de6667824","originalAuthorName":"张秀娟"}],"doi":"10.3321/j.issn:1005-3093.2004.04.006","fpage":"373","id":"b32bb1e2-6920-4e03-af1e-cde81f0ef35c","issue":"4","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"203ab90a-3fb1-471a-a3d5-9392cd509a70","keyword":"无机非金属材料","originalKeyword":"无机非金属材料"},{"id":"d091120b-ced2-4632-882c-a915b78e26c1","keyword":"FeS2薄膜","originalKeyword":"FeS2薄膜"},{"id":"b213a8ed-c2c1-4b16-87a5-8a7853ad8a0f","keyword":"Fe膜硫化法","originalKeyword":"Fe膜硫化法"},{"id":"7154a0ba-c57e-448a-9952-ae0129ab80b3","keyword":"晶体取向","originalKeyword":"晶体取向"},{"id":"66b969e3-3dc5-4932-bedc-10c1625c08c4","keyword":"表面能","originalKeyword":"表面能"},{"id":"be242b07-076c-4aaf-a2c0-235aa28181e0","keyword":"界面应变能","originalKeyword":"界面应变能"}],"language":"zh","publisherId":"clyjxb200404006","title":"薄膜生长基底对FeS2晶体取向的影响","volume":"18","year":"2004"},{"abstractinfo":"用溅射Fe和电沉积Fe3O4先驱体硫化制备出FeS2薄膜,研究了不同先驱体对硫化过程和FeS2薄膜性能的影响.结果表明,两种先驱体结晶成的FeS2能够在一定程度上保留先驱体形貌特征.Fe生成FeS2的热力学驱动力比较高,虽然可能生成FeS的过渡相;Fe硫化生成的薄膜平整致密,晶粒生长比较充分,尺寸较大,其禁带宽度接近理论值.Fe3O4硫化生成FeS2的热力学驱动力较低,生成的薄膜表面疏松多孔,晶粒细小;薄膜的晶界等面缺陷比例较大和几何连续性较低使其电阻率较高、禁带宽度和载流子迁移率低于Fe膜硫化FeS2薄膜.","authors":[{"authorName":"刘艳辉","id":"5b7dcd3f-5614-4430-9f21-b06535178054","originalAuthorName":"刘艳辉"},{"authorName":"侯玲","id":"e5e95343-38de-498d-be0a-4a5c5c16e8ac","originalAuthorName":"侯玲"},{"authorName":"范多旺","id":"9d79fd51-62ed-41b0-a1d4-f4dff707da95","originalAuthorName":"范多旺"},{"authorName":"汪洋","id":"286173a6-9b8c-4283-bbb3-f065b6b0b641","originalAuthorName":"汪洋"},{"authorName":"孟亮","id":"f821c8b5-9ec9-4a7d-b969-aa2c2a2bb47c","originalAuthorName":"孟亮"}],"doi":"10.3321/j.issn:1005-3093.2006.03.017","fpage":"300","id":"12383e93-d854-4584-a9de-d8807d15aba0","issue":"3","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"626eace0-e7ec-4eef-8774-6e82d84df383","keyword":"无机非金属材料","originalKeyword":"无机非金属材料"},{"id":"fbf65f6e-24e6-4843-9a68-fd4ae88c73f7","keyword":"FeS2薄膜","originalKeyword":"FeS2薄膜"},{"id":"e55c9891-6dd0-4f8b-a8e5-f2f1404cc0e4","keyword":"光学性能","originalKeyword":"光学性能"},{"id":"d9d7c4ce-f4b6-49e3-8b90-73ce1323f25a","keyword":"电学性能","originalKeyword":"电学性能"}],"language":"zh","publisherId":"clyjxb200603017","title":"Fe和Fe3O4硫化制备的FeS2薄膜的性能","volume":"20","year":"2006"},{"abstractinfo":"利用电沉积及热硫化法制备了FeS2多晶薄膜,研究了不同硫化时间对FeS2薄膜形成过程的影响.结果表明采用Na2S2O3和FeSO4水溶液电沉积和150～200℃处理可以制备多孔Fe3O4薄膜,再经400℃、80kPa硫化处理,Fe3O4可转变成FeS2多晶薄膜.随硫化时间延长到10h,FeS2的晶格常数减小而晶粒粗化,再继续延长硫化时间,FeS2的晶格常数增大而晶粒尺寸下降.可以用点缺陷浓度、相变应力及亚晶界运动等因素分析Fe3O4向FeS2转变过程中的微观组织参数变化规律.","authors":[{"authorName":"文良起","id":"bf7a39fe-a574-4204-b5de-bc52b7800deb","originalAuthorName":"文良起"},{"authorName":"刘艳辉","id":"242abb6b-6796-42be-87d4-46b30ae6e003","originalAuthorName":"刘艳辉"},{"authorName":"侯玲","id":"852f3413-afe5-4924-8c3c-33da3ad175a6","originalAuthorName":"侯玲"},{"authorName":"孟亮","id":"c8dd6041-2714-476b-842f-23ef1dd658ec","originalAuthorName":"孟亮"}],"doi":"","fpage":"552","id":"59467907-3e4c-49d2-b99a-7cbda7764c65","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"c3f742e8-029f-4c5c-8f65-c88e026dd1af","keyword":"FeS2","originalKeyword":"FeS2"},{"id":"5005ed36-96a8-4a24-9f1e-5cd34013aac4","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"ff556ab1-9b42-4a0b-9321-57d3c422b247","keyword":"电沉积","originalKeyword":"电沉积"},{"id":"3b45c8ee-102e-4017-ba19-53086a58aa92","keyword":"硫化","originalKeyword":"硫化"}],"language":"zh","publisherId":"gncl200504021","title":"硫化时间对电沉积制备FeS2薄膜组织与结构的影响","volume":"36","year":"2005"},{"abstractinfo":"采用高能球磨方法将经过提纯处理的天然FeS2微米粉体制备了纳米粒子,用SEM、TEM、XRD等测试手段对不同球磨时间的FeS2粉体形貌、晶相结构和粒径尺寸进行了表征,并分析了FeS2正极材料的LiSi/FeS2热电池性能.结果表明:随着球磨时间的延长,FeS2的晶粒尺寸逐渐减小,晶相结构没有变化,当球磨时间为30 h时,粒径最小约45 nm.用不同粒径的FeS2粉体装成LiSi/FeS2热电池,分别以0.8 A/cm2和0.2 A/cm2进行单体电池恒流放电性能测试,同时施加脉冲电流进行电池内阻的测试,纳米级FeS2的热电池放电性能和电池内阻分别优于微米级FeS2热电池性能指标.","authors":[{"authorName":"杨潇薇","id":"e1eb5b54-532f-4228-ac8b-c4471231f817","originalAuthorName":"杨潇薇"},{"authorName":"刘效疆","id":"0d8d2d46-13da-4cb1-8f7d-15e4e3229adf","originalAuthorName":"刘效疆"},{"authorName":"杨兆堂","id":"ed523036-7354-4964-8900-faeb19a5b473","originalAuthorName":"杨兆堂"},{"authorName":"兰伟","id":"7e5368c7-e8bb-470f-bbd3-86d39939ef9b","originalAuthorName":"兰伟"}],"doi":"","fpage":"839","id":"e3783ea9-255a-40b0-9a05-a3f798f999a1","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"5d6ac8b7-4bd7-4a95-8636-89433500cf8d","keyword":"LiSi/FeS2热电池","originalKeyword":"LiSi/FeS2热电池"},{"id":"e534efdc-8ff8-4eef-b68c-526aa3a1032e","keyword":"FeS2","originalKeyword":"FeS2"},{"id":"7fe1e144-7873-4195-a678-8d1b58fe7e94","keyword":"高能球磨","originalKeyword":"高能球磨"},{"id":"4c37def2-eac2-4792-8cde-326030c2c983","keyword":"放电性能","originalKeyword":"放电性能"}],"language":"zh","publisherId":"rgjtxb98201404022","title":"FeS2的制备条件对LiSi/FeS2热电池性能的影响","volume":"43","year":"2014"},{"abstractinfo":"采用Fe膜热硫化技术制备了具有不同比表面积和比晶界面积的FeS2薄膜,并测定其载流子浓度和电阻率,研究了FeS2薄膜表面和晶界等面缺陷对FeS2薄膜电学性能的影响.结果表明,表面和晶界两种面缺陷对FeS2薄膜的电学性能有类似的影响规律.在一定范围内,随着薄膜比表面积和比晶界面积的增大,载流子浓度提高而电阻率下降.面缺陷数量的变化可导致FeS2晶体中点缺陷数量、禁带中缺陷能级密度、不充分相变产物比例和相变应力水平的变化,从而导致载流子浓度和电阻率的变化.","authors":[{"authorName":"井源源","id":"c6977271-d7e3-4a44-908f-ce7cae685f07","originalAuthorName":"井源源"},{"authorName":"刘艳辉","id":"2f9e4e4b-4342-4fb9-bb1b-200ec9c5a7f5","originalAuthorName":"刘艳辉"},{"authorName":"孟亮","id":"be659b95-f6eb-43b4-916e-34ecb9a6da53","originalAuthorName":"孟亮"}],"doi":"10.3321/j.issn:1005-3093.2007.01.015","fpage":"77","id":"c479b24e-93bb-48e6-a7ca-401f09a753a4","issue":"1","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"5fa3c452-7d1b-4a30-a3ae-429af9be3763","keyword":"无机非金属材料","originalKeyword":"无机非金属材料"},{"id":"0494e4f1-deb9-4954-97f9-dc077e981363","keyword":"FeS2","originalKeyword":"FeS2"},{"id":"7966aac1-11e2-4884-960c-888c6289ab83","keyword":"晶体缺陷","originalKeyword":"晶体缺陷"},{"id":"721e5d9f-3e3a-4919-823f-07117dc9f81d","keyword":"载流子浓度","originalKeyword":"载流子浓度"},{"id":"b19a0a34-6bab-4b99-8fcf-91b755ab7994","keyword":"电阻率","originalKeyword":"电阻率"}],"language":"zh","publisherId":"clyjxb200701015","title":"晶体面缺陷对FeS2薄膜电学性能的影响","volume":"21","year":"2007"},{"abstractinfo":"本文用磁控溅射法制备的纯Fe膜,再在S 气氛中(80kPa)于不同的温度下(200～600℃)进行热硫化,硫化时间为10h,使其转变成为FeS2薄膜,并研究了硫化温度对转变形成的FeS2薄膜晶体结构、化学成分、组织形貌和光电性能的影响规律.","authors":[{"authorName":"徐文雷","id":"5f2f5744-ddf8-46f6-9127-9bb02e7b5127","originalAuthorName":"徐文雷"},{"authorName":"孟亮","id":"b6dc7e44-96fe-45e6-80a0-0446e60f6714","originalAuthorName":"孟亮"},{"authorName":"刘茂森","id":"a24ba550-0e0e-4471-a248-1f8c23b03a22","originalAuthorName":"刘茂森"}],"doi":"10.3969/j.issn.1673-2812.1999.04.011","fpage":"45","id":"b08b88f9-e6fd-49f4-bf5b-c3766dac834c","issue":"4","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"4f23e767-6895-40e4-b3ea-1e9530d08cd6","keyword":"FeS2薄膜","originalKeyword":"FeS2薄膜"},{"id":"c68ae1bf-d6cd-4bc3-a268-cb2936f5a274","keyword":"热硫化","originalKeyword":"热硫化"},{"id":"4aab9817-a326-4539-aced-1bac294ab8d0","keyword":"组织结构","originalKeyword":"组织结构"},{"id":"13a1ea61-c337-4b2a-a816-a52f8b132a42","keyword":"光电性能","originalKeyword":"光电性能"}],"language":"zh","publisherId":"clkxygc199904011","title":"硫化温度对FeS2薄膜的晶体结构和光电性能的影响","volume":"17","year":"1999"},{"abstractinfo":"采用不同厚度的Fe膜在673K热硫化20h 制备出具有不同晶粒尺寸的FeS₂薄膜, 分析并测定了薄膜组织结构、微应变及光吸收性能. 结果表明, Fe膜硫化形成的FeS₂薄膜厚度在120～550nm范围内变化时, 可导致平均晶粒尺寸在40～80nm之间变化. FeS₂晶粒尺寸的变化造成了晶体面缺陷密度的变化, 可引起微观内应力水平、缺陷能级分布和晶界势垒高度的变化, 进而使得薄膜的微应变、点阵畸变度、光吸收系数及禁带宽度等物理特性随晶粒尺寸的增加而降低.","authors":[{"authorName":"刘艳辉","id":"25b2ac30-8dee-452b-839a-c4d97a8b680b","originalAuthorName":"刘艳辉"},{"authorName":"汪洋","id":"e921727a-fb12-41a6-8b2e-da8e0600692a","originalAuthorName":"汪洋"},{"authorName":"孟亮","id":"99bff09d-04b6-4d49-a2b1-be8bdd223ef5","originalAuthorName":"孟亮"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2007.00143","fpage":"143","id":"256b9f3b-4fd0-4e12-8250-385681b87509","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"09eec122-d9c2-49f4-98cd-15d9ca5f1b3d","keyword":"FeS2","originalKeyword":"FeS2"},{"id":"1ac52409-b53b-4251-85a1-a915d09263c4","keyword":" grain size","originalKeyword":" grain size"},{"id":"2823d6c1-381c-453f-a3f7-44971140fb8f","keyword":" microstrain","originalKeyword":" microstrain"},{"id":"34dae944-38f6-4508-b1cd-d15e3d2c2d62","keyword":" energy gap","originalKeyword":" energy gap"}],"language":"zh","publisherId":"1000-324X_2007_1_13","title":"晶粒尺寸对FeS₂薄膜微应变及光吸收特性的影响","volume":"22","year":"2007"},{"abstractinfo":"采用不同厚度的Fe膜在673K热硫化20h制备出具有不同晶粒尺寸的FeS2薄膜,分析并测定了薄膜组织结构、微应变及光吸收性能.结果表明,Fe膜硫化形成的FeS2薄膜厚度在120～550 nm范围内变化时,可导致平均晶粒尺寸在40～80 nm之间变化.FeS2晶粒尺寸的变化造成了晶体面缺陷密度的变化,可引起微观内应力水平、缺陷能级分布和晶界势垒高度的变化,进而使得薄膜的微应变、点阵畸变度、光吸收系数及禁带宽度等物理特性随晶粒尺寸的增加而降低.","authors":[{"authorName":"刘艳辉","id":"f3bc1fa3-6406-41a5-8f43-412e9abde03d","originalAuthorName":"刘艳辉"},{"authorName":"汪洋","id":"98346186-dfc6-4ca7-916d-dcf1c5734836","originalAuthorName":"汪洋"},{"authorName":"孟亮","id":"9cb48806-22cf-4f3d-828c-0bb069be3b01","originalAuthorName":"孟亮"}],"doi":"10.3321/j.issn:1000-324X.2007.01.029","fpage":"143","id":"318df8fc-20d6-42ab-9300-0d80e2f62062","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"92ed1bd1-2755-4bb0-bbdc-0dbf34005763","keyword":"FeS2","originalKeyword":"FeS2"},{"id":"cb12bc73-9f49-431a-8cf5-d92b99df6b26","keyword":"晶粒尺寸","originalKeyword":"晶粒尺寸"},{"id":"89a4cc7d-0b8c-485e-bb9f-fc72f595aba2","keyword":"微应变","originalKeyword":"微应变"},{"id":"5b6ecd17-18e3-4a31-9351-4fbfd14accf5","keyword":"禁带宽度","originalKeyword":"禁带宽度"}],"language":"zh","publisherId":"wjclxb200701029","title":"晶粒尺寸对FeS2薄膜微应变及光吸收特性的影响","volume":"22","year":"2007"}],"totalpage":10515,"totalrecord":105149}