通过一种简便可行的合成工艺,成功合成了3种具有良好挥发性的无碳前体:无水硝酸钛、硝酸锆和硝酸铪.以这些无水金属硝酸盐为前体,采用化学气相沉积(CVD)工艺成功淀积了具有良好介电性能的3种高介电常数(high-k)氧化物薄膜:TiO2、ZrO2和HfO2薄膜.这类不含碳的金属前体能直接在Si衬底上气相沉积,无需引入氧化气体,且沉积温度较低,可避免低介电常数界面层生成,在化学气相沉积栅介质薄膜方面独具优势.
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