从第一原理角度,用基于密度泛函理论(DFT)的全电势线性缀加平面波法(FLAPW)和广义梯度近似(GGA),计算了掺Sn锐钛矿相 TiO2的晶格优化结构和电子结构.结果表明:掺Sn以后晶胞体积明显增大,在z方向有伸长的趋势;掺Sn锐钛矿相TiO2典型晶面的电子密度分布与纯的锐钛矿相TiO2的比较表明,掺杂后的Sn-O键比原来的Ti-O键强;掺Sn锐钛矿相TiO2的能带结构图表明,掺杂后仍为间接带隙的半导体,与未掺杂时比较,能隙减小了0.24 eV,与实验趋势相符.
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