GaN氢化物气相外延(HVPE)生长过程中,衬底表面的温度分布对其生长质量有着重要影响.我们采用计算机模拟,研究了GaN生长过程中所使用的不同结构石墨基座上的温度分布.根据所得不同结构下基座上的温度分布,选择衬底上温度分布最均匀的结构与普通实验使用的基座结构进行实验对比.结果发现,在实际的大流量载气的GaN生长中,采用优化的圆弧凹面结构石墨基座实验组的GaN晶体外延层的生长速率、生长质量和均匀性等比普通方法生长的更好.本文得到的不同HVPE生长环境下的基座结构优化设计方案,为HVPE炉体的设计和氮化物生长具有很好的指导意义.
参考文献
[1] | O.Oda,T.Inoue,Y.Seki,K.Kainosho,et al .GaN Bulk Substrates for GaN Based LEDs and LDs[J].Physica Status Solidi (a),2000,180(1):51~58.,2000. |
[2] | Randy P.Tompkins,Timothy A.Walsh,Michael A.Derenge,et al .HVPE GaN for high power electronic Schottky diodes[J].Solid-State Electronics,2013,79 |
[3] | 王书运,庄惠照,高海永.退火温度和ZnO缓冲层对氨化Ga2O3/ZnO薄膜合成GaN纳米结构的影响[J].材料科学与工程学报,2006(04):568-570,591. |
[4] | 谢自力,韩平,张荣,曹亮,刘斌,修向前,华雪梅,赵红,郑有蚪.LPCVD法在GaN上生长Ge薄膜及其特性[J].材料科学与工程学报,2011(05):655-658,678. |
[5] | W .Seifert,G.Fitzl,E.Butter.Study on the Growth Rate in HVPE of GaN[J].J.Crystal Growth,1981,52 |
[6] | M.Amilusik,T.Sochacki,B.Lucznik,et al .Analysis of selflift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask[J].J.Crystal Growth,2013,380 |
[7] | A.S.Segal,A.V.Kondratyev,S.Yu.Karpov,et al .Surface chemistry and transport effects in GaN hydride vapor phase epitaxy[J].J.Crystal Growth,2004,270 |
[8] | E.Richter,Ch.Hennig,M.Weyers,et.al .Reactor and growth process optimization for grwoth of thick GaN layers on sapphire substrates by HVPE[J].J.Crystal Growth,2005,277 |
[9] | P.Kempisty,B.Lucznik,B.Pastuszka,et al .CFD and reaction computational analysis of the growth of GaN by HVPE method[J].J.Crystal Growth,2006,296(1):31~42.,2006. |
[10] | Lukase J.Sytniewshi,Alexei A.Lapkin,Sergey.Stepanov,et.al .CFD optimisation of up-flow vertical HVPE reactor for GaN growth[J].J.Crystal Growth,2008,310(14):3358~3365.,2008. |
[11] | 任爱光,任晓敏,王琦,熊德平,黄辉,黄永清.低压金属有机化学气相外延生长室热流场的模拟与分析[J].材料科学与工程学报,2006(05):662-665. |
[12] | E.Varadarajan,P.Puviarasu,J.Kumar,et.al .On the chloride vapor-phase epitaxy growth of GaN and its characterization[J].J.Crystal Growth,2004,260 |
[13] | 张亚琳,黄靖云,吴科伟,卢洋藩,叶志镇.MOCVD法在MgO(100)衬底上生长m面ZnMgO薄膜[J].材料科学与工程学报,2013(02):195-198,207. |
[14] | S.Munawar Basha,S.R.Ryu,et al .Effect of growth temperature on gallium nitride nanostructures using HVPE technique[J].Physica E:Low-dimensional Systems and Nanostructures,2012,44(9):1885~1888.,2012. |
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