采用放电等离子烧结法(SPS)制备了四种不同Zn含量的GaSb热电半导体(分别是GaSb,Zn0.9 Ga 2.1Sb2,ZnGa2Sb2和Zn1.1Ga1.9 Sb2),并分析研究其热电性能.结果表明:加Zn后虽然GaSb的Seebeck系数大幅度降低,但电导率提高了约两个数量级,热导率也得以降低,最终热电性能明显提高.在713K时Zn1.1Ga1.9Sb2的最大ZT值达到0.11,比本征GaSb的ZT值提高了近6倍.
参考文献
| [1] | Ni HL;Zhu TJ;Zhao XB .Thermoelectric properties of hydrothermally synthesized and hot pressed n-type Bi2Te3 alloys with different contents of Te[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2005(2):119-122. |
| [2] | Mei-Jiau Huang;Ruey-Hor Yen;An-Bang Wang .The influence of the Thomson effect on the performance of a thermoelectric cooler[J].International Journal of Heat and Mass Transfer,2005(2):413-418. |
| [3] | Wang YR;Lu KQ;Li CX .Structures of liquid GaSb and InSb studied with the extended X-ray-absorption fine-structure method[J].Physical review letters,1997(19):3664-3667. |
| [4] | Hu WG;Wang Z;Su BF;Dai YQ;Wang SJ;Zhao YW .Gallium antisite defect and residual acceptors in undoped GaSb[J].Physics Letters, A,2004(3/4):286-290. |
| [5] | Sunder K;Bracht H .Defect reactions in gallium antimonide studied by zinc and self-diffusion[J].Physica, B. Condensed Matter,2007(0):262-265. |
| [6] | D Shaw .Native defects and self-diffusion in GaSb[J].Semiconductor Science and Technology,2003(7):627-632. |
| [7] | Sung-Jin Kim;Mercouri G.Kanatzids .A Unique Framework in BaGa_2Sb_2: A New Zintl Phase with Large Tunnels[J].Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics,2001(15):3781-3785. |
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