Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films

稀有金属（英文版）, 2006, 25(6): 693-696.

^1, , ^2, , ^3, , ^4, , ^5,

1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Department of Mathematics and Physics,China University of Petroleum,Beijing 102249,China

2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

3.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

4.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Department of Mathematics and Physics,China University of Petroleum,Beijing 102249,China

5.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

基金项目: 国家自然科学基金(50532090)

Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films

Keywords： tin oxide

Polycrystalline SnO2 thin films were deposited on sapphire substrates at 450℃ under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electrical properties of SnO2 thin films was studied. X-ray diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak centered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films.

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Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films

参考文献