用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜.X射线衍射(XRD)在2θ=34°处出现了唯一的衍射峰,半高宽为0.75°;傅里叶红外吸收(FTIR)在414.92cm-1附近出现了对应Zn-O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于370和460nm处的室温光致发光峰;扫描电子显微镜(SEM)和选区电子衍射(SAED)显示了薄膜的表面形貌以及晶格结构.利用PLD法制备了具有c轴取向高度一致的六方纤锌矿结构ZnO薄膜.
ZnO thin films were deposited on n-Si(111) substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD)showed that there was only one sharp diffraction peak at 2θ=34° with the full width at the half maximum (FWHM) of 0.75°.Fourier transform infrared spectrophotometer (FTIR) presented a intensely cliffy absorption peak located at 414. 92nm which was resulted from Zn-O bonds. Photoluminescence (PL) gave us two light emission bands, corresponding to the wavelength of 370 and 460nm. Scanning electron microscopy (SEM) and selected-area electron diffraction (SAED) were employed to analyze the morphology and crystal lattice structure of ZnO thin films. ZnO thin films which had an excellently c-axis preferred orientation and a hexagonal wurtzite structure were prepared.
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