采用溶胶-凝胶法在石英衬底上制备了高度择优取向的ZnO:Al薄膜.用X射线衍射(XRD)、扫描电子显微镜(SEM)分别对薄膜结构和形貌进行了表征,用紫外-可见透射光谱和四探针研究了薄膜的光电性能.结果表明:制备的ZnO:Al薄膜为六角纤锌矿结构,且具有明显的c轴择优取向;Al离子的掺杂浓度和退火温度对薄膜的结构、光电性能有一定的影响,薄膜在可见光区的光透过率为80%～95%;Al的掺杂浓度为1%样品在600℃下空气中退火1h后,薄膜最低的电阻率为7.5×10-2Ω·cm.
参考文献
| [1] | King SL.;Boyd IW.;Gardeniers JGE. .PULSED-LASER DEPOSITED ZNO FOR DEVICE APPLICATIONS[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1996(0):811-818. |
| [2] | Ellmer K;Kudella F;Mientus R et al.[J].Thin Solid Films,1994,247(01):15-23. |
| [3] | Lu J G;Fujita S;Kawaharamura T et al.[J].Journal of Applied Physics,2007,101(083705):1-7. |
| [4] | Fay S;Kroll U;Bucher C;Vallat-Sauvain E;Shah A .Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: temperature-induced morphological changes[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2005(3):385-397. |
| [5] | Bamiduro O;Mustafa H;Mundle R et al.[J].Applied Physics Letters,2007,90(252108):1-3. |
| [6] | Ramamoorthy K;Sanjeeviraja C;Jayachandran M et al.[J].Journal of Crystal Growth,2001,226(2-3):281-286. |
| [7] | Deng H;Russell J J;Lamb R N et al.[J].Thin Solid Films,2004,458(1-2):43-46. |
| [8] | Young-Sung Kim;Weon-Pil Tai .Electrical and optical properties of Al-doped ZnO thin films by sol-gel process[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(11):4911-4916. |
| [9] | Lee JH.;Park BO. .Transparent conducting ZnO : Al, In and Sn thin films deposited by the sol-gel method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):94-99. |
| [10] | Schuler T;Aegerter M A .[J].Thin Solid Films,1999,351(1-2):125-131. |
| [11] | Sagar P;Kumar M;Mehra R M .[J].Thin Solid Films,2005,489(1-2):94-98. |
| [12] | Schuler T;Krajewski T;Grobelsek I;Aegerter MA .Influence of structure zone model parameters on the electrical properties of ZnO : Al sol-gel coatings[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):67-71. |
| [13] | Wang M;Lee K E;Hahn S H et al.[J].Materials Letters,2007,61(4-5):1118-1121. |
| [14] | Anpo M;Shima T;Kodama S et al.[J].Journal of Physical Chemistry,1987,91:4035-4310. |
| [15] | Parmod Sagar;P.K. Shishodia;R.M. Mehra;H. Okada;Akihiro Wakahara;Akira Yoshida .Photoluminescence and absorption in sol-gel-derived ZnO films[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2007(2):800-806. |
| [16] | R.Ghosh;O.K.Paul;D.Basak .Effect of thermal annealing treatment on structural,electrical and optical properties of transparent sol-gel ZnO thin films[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2005(11):1905-1914. |
| [17] | Igasaki Y;Saito H .[J].Journal of Applied Physics,1991,69(04):2190-2195. |
| [18] | LI Li,FANG Liang,CHEN Ximing,LIU Gaobin,LIU Jun,YANG Fengfan,FU Guangzong,KONG Chunyang.Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films[J].稀有金属（英文版）,2007(03):247-253. |
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