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用溶胶-凝胶法和直流反应磁控溅射法制备了表面均匀致密的三氧化钨薄膜,并用双光束紫外可见分光光度计和X衍射分别对薄膜的透光性、结构形态进行了测定;描述了退火温度对薄膜透光性和结构形态的影响,结果表明在高温(>300℃)退火处理后薄膜的透光率下降,且退火温度越高透光率越低;在350℃以下退火处理后得到薄膜样品为非晶态,在350~400℃范围内退火处理,样品由非晶态向晶态转变.

参考文献

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[3] Hiroharu Kawasaki;Tsuyoshi Ueda;Yoshiaki Suda;Tamiko Ohshima .Properties of metal doped tungsten oxide thin films for NO_x gas sensors grown by PLD method combined with sputtering process[J].Sensors and Actuators, B. Chemical,2004(1/2):266-269.
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