p-Si薄膜在氢氟酸溶液中的电化学抛光是通过阳极溶解降低薄膜表面粗糙度.本文用线性扫描研究了在不同的氢氟酸浓度下的电化学行为,发现随氢氟酸溶液浓度的增加阳极溶解速率也随之增加.当氢氟酸浓度为4％及6％时,可得到平整的表面.电化学抛光技术为制备光亮硅面提供了一种简单可行的方法.
参考文献
| [1] | LIU C C .Development of chemical sensor using mic rofabrication and micromachining techniques[J].Materials Chemistry and Physics,1995,42:87-90. |
| [2] | Rappich J;Jungblut H;Aggour M et al.Electrochemical smoothing of silicon(111)[J].Journal of the Electrochemical Society,1994,141(08):99-102. |
| [3] | Serre C;Barret S;Herino R .Characterization of the electropolishing layer during anodic etching of p-type silicon in aqueous HF solutions[J].Journal of the Electrochemical Society,1994,141(08):2049-2053. |
| [4] | Slimani A;Iratni A;Chazalviel J N et al.Experimental study of macropore formation in p-type silieon in a fluoride solution and the transition between macropore formation and electropolishing[J].Electrochimica Acta,2009,54:3139-3144. |
| [5] | Hoar T P;Mowat J A S .Mechanism of electropolishing[J].Nature,1950,165:64-65. |
| [6] | Uhlir A .Shaping of germanium and silicon[J].Bell System Technical Journal,1956,35:333-337. |
| [7] | Sundaram K B;Desal V H.Electropolishing of silicon using hydrazine[J].Journal of Materials Science,1997(08):99-101. |
| [8] | Turner D R .Electropolishing silicon in hydrofluoric acid solutions[J].Journal of the Electrochemical Society,1958,105(07):402-408. |
| [9] | Searson P C;Zhang X G .The Anodic Dissolution of Silicon in HF Solutions[J].Journal of the Electrochemical Society,1990,137(08):2539-2546. |
| [10] | Fang C;Foll H;Carstensen J .Electrochemical pore etching in germanium[J].Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry,2006(2):259-288. |
| [11] | Meek R L .Anodic dissolution of N silicon[J].Journal of the Electrochemical Society,1971,118:437-441. |
| [12] | Zhang X G;Collins S D;Smith R L .Porous silicon formation and electropolishing of silicon by anodic polarization in HF solution[J].Journal of the Electrochemical Society,1989,136(05):1561-1565. |
| [13] | Memming R;Schhwandt G .Anodic dissolution of silicon in hydrofluoric atcid solutions[J].Science,1966,4:109-124. |
| [14] | Allongue P;Jiang P;Kirchner V et al.Electrochemical micromachining of p-type silicon[J].Journal of Physical Chemistry B,2004,108:14434-14439. |
| [15] | Lehmann V;Foll H .Formation mechanism and properties of electrochemically etched trenches in n-type silicon[J].Journal of the Electrochemical Society,1990,137(02):653-659. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%