用原子层沉积法在钠钙玻璃上沉积氧化锌薄膜,利用场发射扫描电镜和X射线衍射(XRD)等对样品表面形貌和物相进行分析,结果表明得到的ZnO纳米颗粒为六角纤锌矿结构,颗粒的尺寸在30~60 nm之间;测得的ZnO薄膜厚度仅50 nm,符合缓冲层要求;薄膜在可见光区域透射率达90%以上;使用原子层沉积氧化锌薄膜作铜铟镓硒太阳能电池的缓冲层,TEM显示氧化锌层完好、致密地覆盖在CIGS层上,电池的光电转换效率较高,完全可以替代有毒的CdS作缓冲层.
参考文献
[1] | 申灿,刘雄英,黄光周.原子层沉积技术及其在半导体中的应用[J].真空,2006(04):1-6. |
[2] | 吴宜勇,李邦盛,王春青.单原子层沉积原理及其应用[J].电子工业专用设备,2005(06):6-10,17. |
[3] | Patzer-Bjorkman C.;Lu J.;Kessler J.;Stolt L. .Interface study of CuInSe2/ZnO and Cu(In,Ga)Se-2/ZnO devices using ALD ZnO buffer layers[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(0):321-325. |
[4] | 杨黎,程永进,安黛宗,景锐平,刘长珍.准薄膜状氧化锌晶体的制备温度与其结构和发射光谱的研究[J].材料导报,2010(02):16-18,28. |
[5] | Malm U;Malmstrom J;Platzer-Bjorkman C;Stolt L .Determination of dominant recombination paths in Cu(In,Ga)Se-2 thin-film solar cells with ALD-ZnO buffer layers[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(0):208-212. |
[6] | Platzer-Bjorkman C;Torndahl T;Abou-Ras D;Malmstrom J;Kessler J;Stolt L .Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se-2 based thin film solar cells: Band alignment and sulfur gradient[J].Journal of Applied Physics,2006(4):44506-1-44506-9-0. |
[7] | J. H. Shi;S. M. Huang;J. B. Chu;H. B. Zhu;Z. A. Wang;X. D. Li;D. W. Zhang;Z. Sun;W. J. Cheng;F. Q. Huang;X. J. Yin .Effect of ZnO buffer layer on AZO film properties and photovoltaic applications[J].Journal of Materials Science. Materials in Electronics,2010(10):1005-1013. |
[8] | Yen Kuo-Yi;Liu Kuang-Pi;Gong Jyh-Rong et al.Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O[J].Journal of Materials Science:Materials in Electronics,2009,20(02):1255. |
[9] | Saito K.;Yamamoto Y.;Matsuda A.;Izumi S.;Uchino T.;Ishida K. Takahashi K. .Atomic layer growth and characterization of ZnO thin films[J].Physica status solidi, B. Basic research,2002(2):925-929. |
[10] | C-Y.Yen;S.-R.Jian;G.-J.Chen;C.-M.Lin;H.-Y.Lee;W.-C.Ke;Y.-Y.Liao;P.-F.Yang;C.-T.Wang;Y.-S.Lai;Jason S.-C.Jangs;J.-Y.Juang .Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2011(17):7900-7905. |
[11] | Godlewski M;Guziewicz E et al.ZnO layers grown by atomic layer deposition:A new material transpa-rent conductive oxide[J].Thin Solid Films,2009,518(04):1145. |
[12] | Hisao Makino;Aki Miyake;Takahiro Yamada;Naoki Yamamoto;Tetsuya Yamamoto .Influence Of Substrate Temperature And Zn-precursors On Atomic Layer Deposition Of Polycrystalline Zno Films On Glass[J].Thin Solid Films,2009(10):3138-3142. |
[13] | Charlotte Platzer-Bj(o)rkman;John Kessler;Lars Stolt.Atomic layer deposition of Zn(O,S) buffer layers for high efficiency Cu(In,Ga)Se2 solar cells[A].Osaka,Japan,2003:11. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%