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采用射频反应磁控溅射工艺,以纯Zr为靶材,在WO3/ITO/Glass基片上采用不同工艺参数沉积ZrN_x薄膜,用紫外-可见分光光度计、循环伏安法、X射线衍射仪、扫描电镜等研究了ZrN_x薄膜的离子导电性能.研究结果表明,所制备的ZrN_x薄膜为非晶态,ZrN_x/WO_3/ITO/Glass复合膜的光学调节范围最大达57%以上,在离子传导过程中表现出良好的离子导电性能.

Using pure zirconium and chromium as targets,ZrN_x films were deposited on WO_3/ITO/Glass substrates by reactive magnetron sputtering.The films were analyzed by UV-Vis spectrophotometer,cyclic voltammetry (CV),X-ray diffractometer (XRD),FEG-SEM and so on.The ion conductor properties of the ZrN_x films were studied. The research results show that the ZrN_x films deposited by reactive magnetron sputtering are amorphous.The maximum optical modulation range of ZrN_x/WO_3/ITO/Glass device is more than 57%.The ZrN_x films exhibit good ionic conductivity in the ion conductive process.

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