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采用无催化剂辅助化学气相沉积法,以无水AlCl3、NH3气和无水CaCl2分别作为Al源、N源和Ca源,首次获得Ca掺杂AlN纳米棒阵列.纳米棒的长度约为几百纳米,直径为200~500nm.能谱(EDS)证明Ca掺杂的原子分数约为4.4%;光致发光光谱(PL)表明N空位引起在359nm的发光中心;在磁性能测试中观察到明晰的磁滞回线,表明样品具有室温铁磁性.

参考文献

[1] Ohno H .Making nonmagnetic semiconductors ferromagnetic[J].Science,1998,281:951.
[2] Matsumoto Y;Murakami M;Shono T et al.Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide[J].Science,2001,291:854.
[3] Das G P;Rao B K;Jena P .Ferromagnetism in Cr-doped GaN:A first-principles calculation[J].Physical Review B:Condensed Matter,2004,69:214422.
[4] Wolf S A;Awschalom D D;Buhrman R A et al.Spintronics:A spin-based electronics vision for the future[J].Science,2001,294:1488.
[5] Munekata H;Ohno H;Molnar S V et al.Diluted magnetic Ⅲ-Ⅴ semiconductors[J].Physical Review Letters,1989,63:1849.
[6] Ohno H;Shen A;Matsukura F et al.(Ga,Mn)As:A new diluted magnetic semiconductor based on GaAs[J].Applied Physics Letters,1996,69:363.
[7] Reed M L;El-Masry N A;Stadelmaier H H et al.Room temperature ferromagnetic properties of (Ga,Mn) N[J].Applied Physics Letters,2001,79:3473.
[8] Park CH.;Zhang SB.;Wei SH. .Origin of p-type doping difficulty in ZnO: The impurity perspective - art. no. 073202[J].Physical Review.B.Condensed Matter,2002(7):3202-0.
[9] Vurgaftman I.;Ram-Mohan LR.;Meyer JR. .Band parameters for III-V compound semiconductors and their alloys [Review][J].Journal of Applied Physics,2001(11 Pt.1):5815-5875.
[10] Sato K;Dederichs P H;Araki K et al.Ab initio materials design and curie temperature of GaN-based ferromagnetic semiconductors[J].Physical Status Solidi C,2003,7:2855.
[11] Yang S G;Pakhomov A B;Hung S T et al.Room-temperature magnetism in Cr-doped AlN semiconductor films[J].Applied Physics Letters,2002,81:2418.
[12] Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films[J].Applied physics letters,2003(18):3047-3049.
[13] Kumar D;Antifakos J;Blamire M G et al.High Curie temperatures in ferromagnetic Cr-doped AlN thin films[J].Applied Physics Letters,2004,84:5004.
[14] Polyakov A Y;Smirnov N B;Govorkov A V et al.Properties of highly Cr-doped AlN[J].Applied Physics Letters,2004,85:4067.
[15] Frazier RM;Thaler GT;Leifer JY;Hite JK;Gila BP;Abernathy CR;Pearton SJ .Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy[J].Applied physics letters,2005(5):2101-1-2101-3-0.
[16] Cui X Y;Fernandez-Hevia D;Delley B et al.Embedded clustering in Cr-doped AlN evidence for general behavior in dilute magnetic Ⅲ-nitride semiconductors[J].Journal of Applied Physics,2007,101:103917.
[17] Fan B;Zeng F;Chen C et al.Influence of strain and grain boundary variations on magnetism of Cr-doped AlN films[J].Journal of Applied Physics,2009,106:73907.
[18] Zeng F;Chen C;Fan B et al.Effect of carbon doping on microstructure,electronic and magnetic properties of Cr:AlN films[J].Journal of Alloys and Compounds,2011,509:440.
[19] Erkan A B .Growth and characterization of Mn doped GaN and AlGaN dilute magnetic semiconductors[D].Raleigh:North Carolina State University,2004.
[20] Ham MH;Yoon S;Park Y;Myoung JM .Role of manganese in ferromagnetic (AI,Mn)N films[J].Solid State Communications,2006(1/2):11-15.
[21] Li, H;Bao, HQ;Song, B;Wang, WJ;Chen, XL;He, LJ;Yuan, WX .Ferromagnetic properties of Mn-doped AlN[J].Physica, B. Condensed Matter,2008(21/22):4096-4099.
[22] Ko KY;Barber ZH;Blamire MG .Structural and magnetic properties of V-doped AlN thin films[J].Journal of Applied Physics,2006(8):83905-1-83905-3-0.
[23] Gao XD;Jiang EY;Liu HH;Mi WB;Li ZQ;Wu P;Bai HL .Structure and RT ferromagnetism of Fe-doped AlN films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(12):5431-5435.
[24] Ji X H;Lau S P;Yu S F et al.Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods[J].Applied Physics Letters,2007,90:193118.
[25] Yang, SL;Gao, RS;Niu, PL;Yu, RH .Room-temperature ferromagnetic behavior of cobalt-doped AlN nanorod arrays[J].Applied physics, A. Materials science & processing,2009(3):769-774.
[26] 杨松林,高润生,于荣海.电弧放电方法制备Co掺杂AlN纳米棒[J].稀有金属材料与工程,2009(z2):991-993.
[27] Li, H;Bao, HQ;Song, B;Wang, WJ;Chen, XL .Observation of ferromagnetic ordering in Ni-doped AlN polycrystalline powders[J].Solid State Communications,2008(9/10):406-409.
[28] Ji XH;Lau SP;Yu SF;Yang HY;Herng TS;Chen JS .Ferromagnetic Cu-doped AlN nanorods[J].Nanotechnology,2007(10):5601-1-5601-4-0.
[29] Li, H.;Chen, X.L.;Song, B.;Bao, H.Q.;Wang, W.J. .Copper-doped AlN polycrystalline powders: A class of room-temperature ferromagnetic materials[J].Solid State Communications,2011(6):499-502.
[30] Lei W W;Liu D;Chen X et al.Ferromagnetic properties of Y-doped AlN nanorods[J].Journal of Physical Chemistry C,2010,114:15574.
[31] Lei W W;Liu D;Zhu P W et al.Ferromagnetic Sc-doped AlN sixfold-symmetrical hierarchical nanostructures[J].Applied Physics Letters,2009,95:162501.
[32] Lei W W;Liu D;Ma Y M et al.Scandium-doped AlN 1D hexagonal nanoprisms:A class of room-temperature ferromagnetic materials[J].Angewandte Chemie International Edition,2010,49:173.
[33] Elfimov IS.;Yunoki S.;Sawatzky GA. .Possible path to a new class of ferromagnetic and half-metallic ferromagnetic materials - art. no. 216403[J].Physical review letters,2002(21):6403-0.
[34] Wu R Q;Peng G W;Liu L et al.Ferromagnetism in Mgdoped AlN from ab initio study[J].Applied Physics Letters,2006,89:142501.
[35] Zhou, W;Liu, LJ;Wu, P .Nonmagnetic impurities induced magnetism in SnO2[J].Journal of Magnetism and Magnetic Materials,2009(19):3356-3359.
[36] Fan S W;Yao K L;Liu Z L et al.Ferromagnetic properties,electronic structure,and formation energy of Ga0.9375-M0.0625N (M=vacancy,Ca) by first principles study[J].Journal of Applied Physics,2008,104:43912.
[37] Zhang, Y;Liu, W;Liang, P;Niu, HB .Half-metallic ferromagnetism in Ca-doped AIN from first-principles study[J].Solid State Communications,2008(7/8):254-257.
[38] Strasshurg M;Senawiratne J;Dietz N et al.The growth and optical properties of large,high-quality AlN single crys-tals[J].Journal of Applied Physics,2004,96:5870.
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