报道了一种在较低温度一次烧结制备的具有高介电常数、较低损耗和良好显微结构的晶界层电容器材料(简称ＧＢＢＬＣ)．材料的有效介电常数高达３７×１０４,损耗可控制在４%,晶粒５μｍ左右,ΔＣ/Ｃ＜±３%(２０~１５０℃),频率色散较小,且制备工艺简单．
A SrTiO3-based GBBL capacitor material containing Nb2O5, Bi2O3·3TiO2, LiF, single-fired below 1200℃, was prepared. Its dielectric properties and microstructure were investigated. The results show that εeff-37×104, tgδ-4%, △C/C<±3%(20-150℃) , grain size d-5μm.
参考文献
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