利用辐照质粒DNA构象变化的分子模型,以DNA糖苷酶Fpg和AP核酸内切酶Endo Ⅲ识别并切割辐射所致DNA碱基损伤,将其转换为DNA断裂损伤,通过电泳分析DNA分子构象变化,研究比较γ射线、质子和7Li离子诱发DNA集簇性损伤.50Gy以上高剂量γ辐射对质粒DNA的损伤主要表现为单链断裂(SSB)和很少比例的双链断裂(DSB),并能产生一定水平的集簇性损伤.相比之下,高能质子束和高LET的7Li离子直接所致DNA的断裂损伤以及所产生的集簇性碱基损伤比γ射线的要严重,质子10 Gy照射就可诱发明显的集簇损伤.
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