欢迎登录材料期刊网

材料期刊网

高级检索

多晶硅薄膜是集晶体硅材料和非晶硅氢合金薄膜优点于一体,在能源科学、信息科学的微电子技术中有广泛应用的一种新型功能材料.本文综述低温(<600℃)制备高质量多晶硅薄膜技术的研究进展及其应用,着重讨论用等离子体化学气相沉积(PECVD)硅基薄膜固相晶化制备多晶硅技术及其在薄膜硅太阳能电池上的应用.

参考文献

[1] Takakura H et al.International Solar Energy[D].Society 1997 Solar World Conference,1997.
[2] Yamamoto K;Yoshimi M;Tawada Y et al.[J].Journal of Applied Physiology,1999,A69:179-185.
[3] Arimoto S;Morikawa H;Deguchi M et al.[J].Solar Energy Materials and Solar Cells,1994,34:257.
[4] Morikawa H.;Naomoto H.;Kawama Y.;Takami A.;Arimoto S. Ishihara T.;Namba K.;Nishimoto Y. .16.0% efficiency of large area (10 cm x 10 cm) thin film polycrystalline silicon solar cell[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1998(1/2):23-28.
[5] Matsuyama T;Wakisaka K;Kameda M et al.[J].Japanese Journal of Applied Physics,1990,29:2327.
[6] Matsuyama T;Tanaka M;Tsuda S et al.[J].Japanese Journal of Applied Physics,1993,32:3720.
[7] Matsuyama T;Terada N;Baba T et al.[J].Journal of Non-Crystalline Solids,1996,198-200:940-944.
[8] Mohammed-Brahim T.;Briand D.;Sarret M.;Bonnaud O.;Kleider JP.;Longeaud C.;Lambert B.;Kis-Sion K. .From amorphous to polycrystalline thin films: dependence on annealing time of structural and electronic properties[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1998(Pt.B):962-966.
[9] Nakazawa K;Tanaka K .[J].Journal of Applied Physics,1990,68:1092.
[10] MohammedBrahim T;Sarret M;Briand D;KisSion K;Haji L;Bonnaud O;Louer D;Hadjaj A;ECOLE POLYTECH LPICM F-91120 PALAISEAU FRANCE. .Effect of the starting amorphous structure on the solid-phase crystallization of silicon[J].Philosophical magazine.B.Physics of condensed matter, electronic, optical, and magnetic properties,1997(2):193-212.
[11] Chris G;Walle Van de .[J].Journal of Non-Crystalline Solids,1998,227-250:111.
[12] 余楚迎,林璇英,姚若河,吴萍,林揆训.a-Si:H薄膜结构对多晶硅薄膜性能的影响[J].功能材料,2000(02):157-158,161.
[13] 吴萍;林璇英;姚若河 等.[J].材料导报,1999,13:62.
[14] Yao Ruohe;Lin Xuanying;Wu Pin et al.[J].Solar Energy Materials and Solar Cells,2000,62:187-192.
[15] Moniruzzaman S;Inokuma T;Kurata Y et al.[J].Thin Solid Films,1999,337:29.
[16] Kim J H;Lee J Y .[J].Japanese Journal of Applied Physics,1996,35:2052.
[17] Nast O.;Koschier LM.;Sproul AB.;Wenham SR.;Puzzer T. .Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature[J].Applied physics letters,1998(22):3214-3216.
[18] Richard S;Crandall;Xiao Liu.J Non-Cryst Solids[M].:227.
[19] Brockhoff AM.;Meiling H.;Habraken FHPM.;van der Weg WF.;Ullersma EHC. .Structure and hydrogen content of stable hot-wire-deposited amorphous silicon[J].Applied physics letters,1998(22):3244-3246.
[20] Rath JK.;Schropp REI.;Barbon A. .Limited influence of grain boundary defects in hot-wire CVD polysilicon films on solar cell performance[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1998(Pt.B):1277-1281.
[21] Bauer S.;Oechsner H.;Schroder B. .The effect of hydrogen dilution on the microstructure and stability of a-Si : H films prepared by different techniques[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1998(Pt.A):34-38.
[22] Ichikawa M;Takeshita J;Yamada A et al.[J].Japanese Journal of Applied Physics,1999,38:24.
[23] Feenstra K F;Schropp R E I;Van der Weg W F .[J].Journal of Applied Physics,1999,85:6843.
[24] Syed M;Inokuma T;Kurata Y et al.[J].Japanese Journal of Applied Physics,1997,36:6625.
[25] Ray S;Mukhopadhyay S;Saha S C et al.[J].Thin Solid Films,1999,337:7.
[26] Lee B;Quinn L J;Baine P T et al.[J].Thin Solid Films,1999,337:55.
[27] Moniruzzaman S;Inokuma T;Kurata Y et al.[J].Thin Solid Films,1999,337:29.
[28] Hazar et al.[J].Journal of Physics D:Applied Physics,1999(32):208.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%