介绍了采用反应溅射法制备双面Y<,2>O<,3>双面种子层长带材,通过引入水汽使Y原子在RABiTS基带上氧化成膜,同时有效的避免了基带的氧化.通过对工艺参数的优化,成功制备了高质量的Y<,2>O<,3>种子层,其面内面外半高宽仅为3.8°和1.4°,大大改善了金属基带的双轴织构特性,同时薄膜表面粗糙度仅为2.8nm.在制备的高质量种子层上采用溅射方法外延生长YSZ阻挡层和CeO<,2>模板层,薄膜表面光滑,并具有良好的均匀性和双面一致性.用双倒简靶溅射法制备YBCO超导层,采用旋转结合轴向自动进退,改善了薄膜受热不均的现象,获得了高质量的双面高温超导带材.其中短样双面临界电流Ⅰ<,c>之和超过了400 A/cm-w,同时成功制备了长度超过1米,Ⅰ<,c>>210 A/cm-W的双面高温超导带材.
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