用单源低能氩离子束辅助沉积（ＩＢＡＤ）法制备了非晶碳薄膜．氩离子能量为４００－１５００ｅＶ．膜面光滑致密，与衬底的结合力较高。用Ｒａｍａｎ，ＦＴＩＲ，ＨＲＴＥＭ，ＴＥＤ，ＳＥＭ，ＥＲＤ及ＲＢＳ研究了薄膜的形貌、结构和组分，测量了膜的电阻率、显微硬度及摩擦系数．薄膜为无定形的类金刚石（ＤＬＣ）．其中含氢约为２０５ａｔ．－％，碳原子与氢原子几乎没有形成Ｃ－Ｈ键．随着离子束能量及束流的增加，显微硬度、摩擦系数增加，电阻率减小．硬度增加是由于薄膜致密度的增加，而电阻率降低是由于膜中金刚石键（ｓｐ~３键）含量减少的缘故．
Amorphous carbon films with a smooth surface and a good adhesion to silicon and steel substrates have been prepared by ion beam assisted deposition (IBAD) using a single ion source. The energy of Ar ion ranged from 400 to 1500 eV. The structure and composition of the films were characterized using Raman spectroscopy, FTIR, HRTEM, TED. SEM, ERD and RBS. Electrical resistivity, microhardness and friction coefficient were tested to evaluate the films. The films was proved to be diamond like carbon (DLC). The hydrogen content measured by ERD is about 2.05 at.-%. The carbon hydrogen bond (C-H) seemes unformed. As ion energy and beam current increased. microhardness and friction coefficient increased. but electrical resistivity decreased. The increased microhardness is due to the increased film density and the decreased electrical resistivity is due to the decreased concentration of sp~3 bonds in the film.
参考文献
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