采用射频磁控溅射方法,在Si(111)和石英衬底上制备了Fe/Si亚层厚度比不同的多层膜.多层膜的总厚度为252 nm,Fe/Si亚层厚度比分别为1 nm/3.2 nm、2 nm/6.4 nm和20 nm/64 nm.在850 ℃, Ar气气氛中退火2 h后,Si衬底上的多层膜完全生成了β-FeSi2相.但石英衬底上同样Fe/Si亚层厚度比的多层膜除了生成β-FeSi2相,还生成了少量的ε-FeSi相.通过增加Si亚层的厚度至Fe/Si亚层厚度比为2 nm/7.0 nm,在石英衬底上也获得了单相的β-FeSi2薄膜, 其光学带隙为0.87 eV,表面均方根粗糙度为2.34 nm.
参考文献
| [1] | Terasawa, S;Inoue, T;Ihara, M .Fabrication of beta-FeSi2/Si composite films for photovoltaic applications by using scanning annealing[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(2):215-221. |
| [2] | Hossain, MZ;Mimura, T;Uekusa, S .Epitaxial growth and optical characterization of compound semiconductor beta-FeSi2 prepared by pulsed laser deposition[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2009(9):931-936. |
| [3] | Suzuno M;Koizumi T;Suemasu T et al.p-Si/β-FeSi2/n-Si Double-heterostructure Light-emitting Diodes Achieving 1.6 μm Electrolumine-scence of 0 4 mW at Room Temperature[J].Applied Physics Letters,2009,94:213509. |
| [4] | Bost M C;Manhan J E .Optical Properties of Semiconducting Iron Disilicide Thin Films[J].Journal of Applied Physics,1985,58(07):2696-2073. |
| [5] | M. Sasase;T. Nakanoya;H. Yamamoto .Formation of 'environmentally friendly' semiconductor (β-FeSi_2) thin films prepared by ion beam sputter deposition (IBSD) method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1/2):73-76. |
| [6] | Powalla M;Herz K .Co-evaporated Thin Films of Semiconducting β-FeSi2[J].Applied Surface Science,1993,65-66:482-488. |
| [7] | Green M A.Third Generation Concepts for Photovoltaics[A].Osaka,Japan,2003:50-54. |
| [8] | Liu Z X;Wang S N;Otogawa N.A Novel β-FeSi2 Thin Film Solar Cell Fabricated by Sputtering[A].Osaka,Japan,2003:126-129. |
| [9] | 郁操,侯国付,刘芳,孙建,赵颖,耿新华.退火温度和β-FeSi2薄膜厚度对n-β-FeSi2/p-Si异质结太阳电池的影响[J].人工晶体学报,2009(03):662-665,676. |
| [10] | Liu ZX;Osamura M;Ootsuka T;Kuroda R;Makita Y;Tanoue H;Fukuzawa Y;Otogawa N;Nakayama Y .Formation of beta-FeSi2 thin films on non-silicon substrates[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(4):1532-1538. |
| [11] | Wang S N;Otogawa N;Fukuzawa Y.Prototype Infrared Optical Sensor and Solar Cell Made of β-FeSi2 Thin Film[A].Kiev,Ukrain,2003:188-195. |
| [12] | Yang Z.;Finney MS.;Harry MA.;Reeson KJ.;Homewood KP. .OPTICAL ABSORPTION STUDY OF ION BEAM SYNTHESIZED POLYCRYSTALLINE SEMICONDUCTING FESI2[J].Journal of Applied Physics,1995(3):1958-1963. |
| [13] | Luo L;Zybill C E;Ang H G et al.Substrate Influence on the Formation of FeSi and FeSi2 Films from Cis-Fe(SiCl3)2(CO)4 by LPCVD[J].Thin Solid Films,1998,325:87-91. |
| [14] | 胡冰,李晓娜,董闯,姜辛.磁控溅射法合成纳米β-FeSi2/a-Si多层结构[J].物理学报,2007(12):7188-7194. |
| [15] | 周幼华,陆培祥,杨光,杨义发,郑启光.飞秒激光沉积β-FeSi2/Si半导体膜及光学性能研究[J].无机材料学报,2007(03):545-549. |
| [16] | Shen H L;Lu L F;Zhou L H.A Novel β-FeSi2 Thin Film Prepared by Sputtering for Solar Cell Application[A].北京,2007:1224-1227. |
| [17] | Suemasu T;Hiroi N;Fujii T et al.Growth of Continuous and Highly (100)-oriented β-FeSi2 Films on Si(001) from Si/Fe Multilayers with SiO2 Capping and Templates[J].Japanese Journal of Applied Physics,1999,38:878-881. |
| [18] | Liu Z X;Tanaka M;Kuroda R et al.Influence of Si/Fe Ratio in Multilayer Structures on Crystalline Growth of β-FeSi2 Thin Film on Si Substrate[J].Applied Physics Letters,2008,93:021907. |
| [19] | 刘恩科;朱秉升;罗晋生.半导体物理学[M].西安:西安交通大学出版社,2005:268. |
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