采用自主研发的5 kW不锈钢谐振腔式MPCVD设备,在Ar/H2/CH4气氛下,保持总气压与CH4气流量不变,研究了不同Ar/H2比例对单晶金刚石生长速度和晶体质量的影响.通过拉曼光谱与高分辨率XRD摇摆曲线,从生长速度与生长质量两点对所得样品进行分析.结果表明,适量Ar的存在能够显著提高单晶金刚石的生长速度,并且不损害金刚石的晶体质量.当Ar/H2=30％时,生长速度最高,为35 μm/h.随着Ar/H2比例的进一步增加,单晶金刚石的结晶质量会有所下降,Ar/H2比例过高则会严重破坏单晶金刚石的生长.
参考文献
| [1] | 吕反修,黑立富,刘杰,宋建华,李成明,唐伟忠,陈广超.CVD金刚石大单晶外延生长及高技术应用前景[J].热处理,2013(05):1-11,12. |
| [2] | 于盛旺,刘艳青,唐伟忠,申艳艳,贺志勇,唐宾.高功率MPCVD金刚石膜透波窗口材料制备研究[J].人工晶体学报,2012(04):896-899. |
| [3] | Achard J;Silva F;Tallaire A;Bonnin X;Lombardi G;Hassouni K;Gicquel A .High quality MPACVD diamond single crystal growth: high microwave power density regime[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(20):6175-6188. |
| [4] | O. Brinza;J. Achard;F. Silva;X. Bonnin;P. Barroy;K. De Corte;A. Gicquel .Dependence of CVD diamond growth rate on substrate orientation as a function of process parameters in the high microwave power density regime[J].Physica Status Solidi, A. Applied Research,2008(9):2114-2120. |
| [5] | A. Chayahara;Y. Mokuno;Y. Horino;Y. Takasu;H. Kato;H. Yoshikawa;N. Fujimori .The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD[J].Diamond and Related Materials,2004(11/12):1954-1958. |
| [6] | A. Tallaire;A.T. Collins;D. Charles .Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition[J].Diamond and Related Materials,2006(10):1700-1707. |
| [7] | 张湘辉,汪灵,龙剑平,常嗣和.氩气对直流弧光放电PCVD金刚石薄膜晶体特征的影响[J].人工晶体学报,2010(01):130-134. |
| [8] | D.C. Barbosa;P.R.P. Barreto;V.J. Trava-Airoldi;E.J. Corat .Growth and characterization of diamond micro and nano crystals obtained using different methane concentration in argon-rich gas mixture[J].Diamond and Related Materials,2010(7/9):768-771. |
| [9] | A.L. Vikharev;A.M. Gorbachev;A.V. Kozlov .Microcrystalline diamond growth in presence of argon in millimeter-wave plasma-assisted CVD reactor[J].Diamond and Related Materials,2008(7/10):1055-1061. |
| [10] | A.B. Muchnikov;A.L Vikharev;A.M. Gorbachev .Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations[J].Diamond and Related Materials,2010(5/6):432-436. |
| [11] | 罗春平,孟革,齐上雪,林彰达.原子氢与金刚石表面的相互作用[J].物理学报,1991(04):667-672. |
| [12] | Ji-heng Jiang;Yueh-chieh Chu;Wei-cheng Fang.Effects of gas residence time on microwave plasma enhanced CVD of ultrananocrystalline diamond in mixtures of methane and argon without hydrogen or oxygen additives[J].Diamond and Related Materials,2012:153-157. |
| [13] | Zuyuan Zhou,Guangchao Chen,Bin Li,Weizhong Tang,Fanxiu Lv.Diagnosis of gas phase near the substrate surface in diamond film deposition by high-power DC arc plasma jet CVD[J].北京科技大学学报（英文版）,2007(04):365-368. |
| [14] | G.C. Chen;B. Li;H. Lan .Gas phase study and oriented self-standing diamond film fabrication in high power DC arc plasma jet CVD[J].Diamond and Related Materials,2007(3):477-480. |
| [15] | Dieter M Gruen .NANOCRYSTALLINE DIAMOND FILMS[J].Annual review of materials research,1999(0):211-259. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%