采用射频磁控反应溅射法在不同工艺下制备微米级厚度的氮化硅薄膜,并利用椭圆偏振仪、分光光度计、X射线衍射仪、电子探针显微分析仪以及红外光谱仪对薄膜的光学性能、微观结构及化学成分进行了表征.测试结果表明,当N2和Ar的流量为1∶1时所制备样品为非晶态结构的高折射率富氮氮化硅薄膜；低温热处理对薄膜折射率有一定的改善作用；透过率随溅射气压的增加而升高、随功率的增大而降低；N-Si键的强度随溅射气压的升高而降低.
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