A mathematical model to represent the fluid flow, temperature distribution and mass transfer in CVD reactors has been developed. The model is used to predict the velocity, temperature, and molar concentration profiles in the tapered annulus of a reactor for silicon deposition from SiCl_4 in H_2. Results of the investigation contribute to the understanding of the transport pro- cesses involved in such a system. The model can also be used for optimizing the design parameters, such as inlet flow rate, susceptor tilt angle, etc.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] | |
| [5] |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%