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利用正交实验,对单晶硅表面活化工艺中重要参数对活化效果的影响进行了研究,并优化了工艺.实验针对RCA活化溶液处理工艺的特点,选择溶液配比、处理时间和温度3个重要因素为研究对象,以30%盐水为测试液,以接触角为指标,评估了这3个因素对活化效果的影响规律.对实验结果的分析表明,在此三因素中,活化温度与活化效果的关系最密切,活化液配比和活化时间的影响依次减弱.根据实验分析的结果,得到优化的工艺.利用此优化工艺进行了硅圆片键合实验,其结果表明此工艺能够实现无明显界面缺陷的直接健合.

参考文献

[1] Eichler, M;Michel, B;Thomas, M;Gabriel, M;Klages, CP .Atmospheric-pressure plasma pretreatment for direct bonding of silicon wafers at low temperatures[J].Surface & Coatings Technology,2008(5/7):826-829.
[2] 李仁锋,马凯,郑英彬,袁明权,施志贵,吴嘉丽.硅MEMS器件键合强度在线检测方法[J].微纳电子技术,2009(12):758-763.
[3] Rabold M;Kuster H;Woias P et al.[J].ECS Transactions,2008,16:499-506.
[4] Pan C T;Cheng P J;Chen M F et al.[J].Microelectronics Reliability,2005,45(3-4):657-663.
[5] Dragoi V;Farrens S;Lindner P.Low temperature MEMS Manufacturing Processes:Plasma Activated Wafer Bond-ing,Micro-and Nanosystems-'Materials and Devices[A].United States of America,2005:85-90.
[6] Ventosa C;Rieutord F;Libralesso L et al.[J].ECS Transactions,2008,16:361-368.
[7] Vincent S;Radu 1;Landru D et al.[J].Applied Physics Letters,2009,94:01914(1-019143).
[8] Wiemer M;Haubold M;Jia C et al.[J].ECS Transactions,2008,16:81-92.
[9] Kubair DV;Spearing SM .Cohesive zone model for direct silicon wafer bonding[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(10):3070-3076.
[10] Ventosa C;Rieutord F;Libralesso L et al.[J].Journal of Applied Physics,2008,104:123524(1-1235246).
[11] Fournel F;Moriceau H;Ventosa C et al.[J].ECS Transactions,2008,16:475-488.
[12] Cole D J;Payne M (';Csanyi G et al.[J].Journal of Chemical Physics,2007,127:204704(1-2047012).
[13] Chen MX;Yi XJ;Gan ZY;Liu S .Reliability of anodically bonded silicon-glass packages[J].Sensors and Actuators, A. Physical,2005(1):291-295.
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