为了研究热压温度和AIN含量对AIN-堇青石玻璃复合材料烧结和介电性能的影响,采用真空热压方法在900～1000℃低温烧结制备AIN-堇青石玻璃复合材料,利用X射线衍射、扫描电镜和阻抗分析仪对复合材料的微结构和介电性能进行了研究,结果表明,随着热压温度的提高,复合材料的相对密度增加,复合材料的介电常数和介电损耗减少;在一定的热压温度下,复合材料的介电常数和介电损耗随着AIN引入量的增加而增加,从复合材料的相组成和结构角度对以上结果予以解释,提高热压温度和增加α-堇青石数量均有利于降低复合材料的介电常数和介电损耗,.制备的复合材料具有低的介电常数(5.6～6.5)和低的介电损耗(≤10-3),有望用于微电子封装领域.
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