用扫描电镜(SEM)的电了通道讨度(ECC)技术研究了[001]取向铜单晶中的疲劳位错结构结果表明,SEMECC技术不仅可以真实地、全面地显示疲劳位错组态,而且还揭示了表面出现的宏观形变带与位错结构的对应关系.
The dislocation configuration in a fatigued [001] copper single crystal has beenstudied by using a scanning electron microscope (SEM) with the electron channeling contrast(ECC) technique. It has been shown that this unique technique is efficient to reveal not onlythe fatigue dislocation structures in a large scale but also the relationship between the surfacedeformation bands and inside dislocation structures. It has been proven to be a powerful toolto connect macrostructures and microstructures in fatigued materials.
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