应用坩埚下降法成功地生长出了Ni 2＋掺杂的CdWO4单晶。测定了晶体的吸收与荧光光谱。根据晶体分裂场理论和吸收特性,计算了Ni 2＋在该Cd-WO4晶体中的晶格场分裂参量Dq=1054cm-1、Racah参量B=1280cm-1与C=5982cm-1。在314nm光的激发下,观察到发光中心为480nm的蓝光,这是Cd-WO4晶体中WO66＋中的电子跃迁所致。在808与980nm的激发下,均观察到发光中心分别为1068nm的近红外发射带,归结为和Ni 2＋八面体格位的3 T2g（3F）→3 A2g（3F）能级跃迁。
The Ni2＋-doped CdWO4（CWO） single crystals were grown by the vertical Bridgman technique.The absorption and emission spectra were measured.The crystal field strength of Ni2＋ doped CWO crystal,Dq=1054cm-1,the racah parameter B=1280cm-1 and C=5892cm-1 were calculated according to the absorption spectrum and crystal splitting theory.The emission band at 350-600nm was observed under excitation by 314nm,which were the intrinsic emission of WO6＋6.The emission band at 1068nm was observed under excitation by 808 and 980nm lights,which was attributed to the 3T2g（3F）→3A2g（3F） transition of Ni2＋ in octahedral sites.
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