材料期刊网

We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H(2) concentration. Without the presence of H(2), continuous graphene films are obtained with a mean sheet resistance of < 350 Omega/sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H(2) and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3512865]