随着热电材料与薄膜制备技术和性能研究手段的发展,具有高热电性能的纳米超晶格热电薄膜已受到人们的关注.简要介绍了超晶格热电薄膜的理论研究、制备和分析测试技术,指出了超晶格热电薄膜主要应用环境和存在的问题以及可能的发展方向.
参考文献
[1] | Hicks L D;Dresselhaus M s .Effect of quantum-well structures on the thermoelectric figure of merit[J].Physical Review B:Condensed Matter,1993,47(05):12727. |
[2] | Hicks L D;Dresselhaus M S .Thermoelectric figure of merit of a one-dimensional conductor[J].Physical Review B:Condensed Matter,1993,47(06):16631. |
[3] | Koga T.;Cronin SB.;Dresselhaus MS.;Sun X. .Carrier pocket engineering to design superior thermoelectric materials using GaAs/AlAs superlattices[J].Applied physics letters,1998(20):2950-2952. |
[4] | Balandin A.;Wang KL. .Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well[J].Physical Review.B.Condensed Matter,1998(3):1544-1549. |
[5] | Chen G;Zeng T;Borca-Tasciuc T et al.Phonon engineering in nanostructures for solid state energy conversion[J].Materials Science and Engineering,2000,292:151. |
[6] | Hicks L D;Harman T C;Dresselhaus M S .Use of quanturn-well superlattices to obtain a high figure of merit from nonconventional thermoelectric materials[J].Applied Physics Letters,1993,63(23):3230. |
[7] | 褚君浩.窄禁带半导体物理学[M].北京:科学出版社,2005:71. |
[8] | 沈海军,穆先才.纳米薄膜的分类、特性、制备方法与应用[J].微纳电子技术,2005(11):506-510. |
[9] | 王学华,薛亦渝.薄膜制备新技术及其应用研究[J].真空电子技术,2003(05):65-70. |
[10] | 李洪林,苟立,冉均国.纳米Bi2Te3基热电材料最新研究进展[J].现代技术陶瓷,2005(02):16-20. |
[11] | Skirkh H;Zadeh M .Fabrication and characterization of alkoxy-derived nanophase TiO2 coatings[J].Nano-Structured Materials,1995,5(01):33. |
[12] | Kim Ⅱ Ho .Electronic transport properties of the flash-evaporated p-type Bi0.5 Sb1.5 Te3 thermoelectric thin films[J].Materials Letters,2000,44:75. |
[13] | Helin Zou;D.M.Rowe;Gao Min .Growth of P- and n-type bismuth telluride thin films by co-evaporation[J].Journal of Crystal Growth,2001(1/2):82-87. |
[14] | Teichert S;Sehwendler S;Sarkkar D K et al.Growth of MnSi1.7 on Si(001)by MBE[J].Journal of Crystal Growth,2001,227-228:882. |
[15] | Liu J L;Wang K L;Moore C D et al.Experimental study of a surfactant-assisted SiGe graded Layer and a symmetrically strained Si/Ge superlattices for thermoelectric applications[J].Thin Solid Films,2000,369:121. |
[16] | Hemrich A;Griessmann H;Behr G et al.Thermoelectric properties of β-FeSi2 single crystals and polycrystalline β-Fe-Si2 thin film[J].Tlhin Solid Films,2001,381:287. |
[17] | Beensh-Marchwicka G M;Mielcarek W;Prociów E .Evaluation of pulse magnetron sputtered Ge films doped with antimony for sensors application[J].Sensors and Actuators B-Chemical,2001,76:361. |
[18] | 姚素薇,赵瑾,王宏智,董大为.超晶格多层膜的电化学制备、表征及其GMR特性的研究[J].物理化学学报,2003(10):892-895. |
[19] | 朱文,杨君友,郜鲜辉,侯杰,鲍思前,樊希安.电化学原子层外延法制备碲化铋薄膜[J].应用化学,2005(11):1167-1171. |
[20] | Venkatasubramaman R;Colpitts T;Watko E et al.MOCVD of Bi2 Te3,Sb2 Te3 and their superlattice structures for thin-film thermoelectric applications[J].Journal of Crystal Growth,1997,170:817. |
[21] | Giani A.;Al Bayaz A.;Foucaran A.;Pascal-Delannoy F.;Boyer A. .Elaboration of Bi2Se3 by metalorganic chemical vapour deposition[J].Journal of Crystal Growth,2002(1/3):217-220. |
[22] | Sankapal BR.;Lokhande CD.;Mane RS. .Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method[J].Materials Chemistry and Physics,2000(3):230-234. |
[23] | Sankapal BR.;Lokhande CD. .Photoelectrochemical characterization of Bi2Se3 thin films deposited by SILAR technique[J].Materials Chemistry and Physics,2002(2/3):151-155. |
[24] | Lokhande CD.;Sartale SD.;Pathan HM.;Giersig M.;Ganesan V.;Sankapal BR. .A novel method for the deposition of nanocrystalline Bi2Se3, Sb2Se3 and Bi2Se3-Sb2Se3 thin films - SILAR[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(3/4):413-417. |
[25] | Sankapal BR.;Lokhande CD. .Studies on photoelectrochemical (PEC) cell formed with SILAR deposited Bi2Se3-Sb2Se3 multilayer thin films[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1):43-52. |
[26] | Sankapal BR.;Lokhande CD. .Effect of annealing on chemically deposited Bi2Se3-Sb2Se3 composite thin films[J].Materials Chemistry and Physics,2002(2):126-133. |
[27] | 杨艳,薛晨阳,张斌珍,张文栋.用X双晶衍射法研究InGaAs/GaAs量子阱结构[J].半导体技术,2006(02):105-107. |
[28] | 王为,司丽萍,陈岩,张建中.纳米线阵列结构温差电材料热电性能测试技术[J].电源技术,2003(z1):224-226. |
[29] | Ghamaty S;Elsner N.Thermal and electrical properties of Si/Si0.8 Ge0.2 and B4C/B9C film[A].,1998:206. |
[30] | 丰平,王太宏.3ω方法及其在纳米材料器件表征中的应用[J].物理学报,2003(09):2249-2253. |
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