以高硅铁尾矿为主要原料,利用碳热还原法合成了SiC粉体.分析了合成过程的反应机理,探讨了配碳量和合成温度对合成过程的影响.结果表明,最终产物中β-SiC为主晶相,Fe_xSi_y为次晶相;影响合成SiC粉体最主要的因素是配碳量,其次是反应温度;在保证配碳过量的情况下,保温时间和氩气流量对合成产物的影响不是很明显;产物晶粒存在多种几何形状,其中SiC晶粒多以片状、柱状、球状形式存在,并且晶粒表面比较光滑,晶粒的尺寸分布不均匀.合成SiC的最佳工艺参数为:n(C):n(SiO_2)=5,合成温度1500℃,恒温时间8h,氩气流量0.6L/min.
Silicon carbide powders are prepared by carbothermal reduction method and iron tailings and graphite as raw materials.The reaction mechanism，the effects of carbon addition and the synthetic temperature are discussed.The XRD results show that the main crystal phase is SiC and the second phase is Fe_xSi_y in as-fabricated silicon carbide.The SEM results reveal that the grains of SiC-phase in as-fabricated silicon carbide are flaky-like or globular like.It is found that the carbon addition and the reaction temperature plays a key role to obtain SiC-phase，while the holding time and argon flow rate have a little effect on the yield of SiC as the excessive carbon is used.The optimum sintering temperature，holding time，argon flowing rate，the ratio of n(C):n(SiO_2) are 1500℃，8h，0.6L/min，5:1，respectively.
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