ZnO晶体是直接宽带隙半导体材料,室温下禁带宽度为3.37eV,激子束缚能为60meV.其禁带宽度对应紫外光的波长,有望开发蓝绿光、蓝光、紫外光等多种发光器件.对ZnO晶体的生长方法及研究进展做了简要的叙述.
参考文献
| [1] | 王卿璞,张德恒,于永芹,黄柏标.ZnO薄膜材料的发光特性[J].半导体情报,2001(04):48-53. |
| [2] | Reynolds DC.;Jogai B.;Look DC. .OPTICALLY PUMPED ULTRAVIOLET LASING FROM ZNO[J].Solid State Communications,1996(12):873-875. |
| [3] | Puchert M K;Hartmann A;Lamb R N .[J].Materials Research,1996,11(10):2463. |
| [4] | Vasilier A A;Godovski D Y et al.Semiconductor sensors for determination of fluorine-containing gas mixture[J].Sensors and Actuators,1993,B13-14:705. |
| [5] | Hidehito N;Hideko S et al.Aluminum-doped ZnO thin film gas sensor capable of detecting freshness of sea foods[J].Sensors and Actuators,1993,B13-14:715. |
| [6] | Nielsen J W;Dearborn E F .The growth of large single crystals of zinc oxide[J].Journal of Physical Chemistry,1962,64:1762. |
| [7] | Ushio M;Sumiyoshi Y .Synthesis of ZnO single crystals by the flux method[J].Journal of Materials Science,1993,28:218. |
| [8] | Laudise R A;Kolb E D;Caporaso A J .Hydrothermal growth of large sound crystals of zinc oxide[J].Journal of the American Ceramic Society,1964,47:9. |
| [9] | Sakagami N .Hydrothermal growth and characterization of ZnO single crystals of high purity[J].Journal of Crystal Growth,1990,99:905. |
| [10] | Sekiguchi T.;Obara K.;Shishido T.;Sakagami N.;Miyashita S. .Hydrothermal growth of ZnO single crystals and their optical characterization[J].Journal of Crystal Growth,2000(0):72-76. |
| [11] | Park Y S;Reynolds D C .Growth of ZnO singel crystals[J].Journal of Applied Physics,1967,38(02):756. |
| [12] | Look DC.;Sizelove JR.;Jones RL.;Litton CW.;Cantwell G. Harsch WC.;Reynolds DC. .Electrical properties of bulk ZnO[J].Solid State Communications,1998(6):399-401. |
| [13] | Obr F;Nishigeto S R;Isotani S .Energetic of native de fects in ZnO[J].Journal of Applied Physics,2001,90(02):824. |
| [14] | Maki H.;Ohashi N.;Haneda H.;Tanaka J.;Ichinose N. .Lattice relaxation of a ZnO(0001) surface accompanied by a decrease in antibonding feature[J].Journal of Crystal Growth,2001(1):114-118. |
| [15] | Zu P.;Wong GKL.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Tang ZK. .ULTRAVIOLET SPONTANEOUS AND STIMULATED EMISSIONS FROM ZNO MICROCRYSTALLITE THIN FILMS AT ROOM TEMPERATURE[J].Solid State Communications,1997(8):459-463. |
| [16] | Butkhuizi T V;Bureyev A V;Georgobiani N P et al.Op tical and electrical properties of radical beam gettering epitaxy grown n-and p-type ZnO single crystals[J].Journal of Crystal Growth,1992,117:366. |
| [17] | Sakagami N.;Sekiguchi T.;Miyashita S.;Obara K.;Shishido T.;Yamashita M. .Variation of electrical properties on growth sectors of ZnO single crystals[J].Journal of Crystal Growth,2001(1):98-103. |
| [18] | Urbieta A;Fernandez P;Piqueras J et al.Scanning tun neling spectroscopy characterization of ZnO single crys tals[J].Semiconductor Science and Technology,2001,16:589. |
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