氮化铜(Cu_3N)薄膜是一种新型的电、光学材料,它具有典型的反三氧化铼结构,由于Cu原子没有很好地占据(111)晶格面的紧密位置.在薄膜中掺杂之后,薄膜的电、光学性质会发生显著变化.Cu_3N在较低温度下会分解为Cu和N_2.介绍了Cu_3N的制备方法,总结了该膜制备方法和工艺参数对薄膜结构的影响,分析了在不同N_2分压下薄膜由(111)晶面转向(100)晶面择优生长和薄膜定向生长的原因,讨论了薄膜的电学、光学、热学等物理性质及其在相关方面的应用,并对该膜的物理性质与结构之间的关系作了简要分析.
New material of copper nitride (Cu_3N) films will be used in the electrical and optical field, because of its anti-ReO_3 type crystal structure and low decomposing temperature. Since the Cu atoms do not occupy the close-packing sites of (111) plane, the films can be filled by other atoms into the body center, which leads to remarkable change of the electrical and optical properties. The films can decompose into Cu and N_2 at low temperature. In this pa-per, the preparation methods of the films are introduced and the deposition conditions are summarized; the influence of preparation methods and deposition conditions to the compositions and the structure of chemical bonds are explained. The reasons of films' growth prefers the (111) direction at the low nitrogen pressure and the (100) direction at high nitrogen pressure are analyzed. The electrical, optical, calorific properties and applications of the films are also stu-died, and the association between the physical properties and structure is discussed.
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