研究直流磁控反应溅射ITO膜过程中ITO靶材的毒化现象,用XRD、EPMA、LECO测氧仪等手段对毒化发生的机理进行分析,并对若干诱导因素进行讨论,研究表明ITO靶材毒化是由于In2O3。主相分解为In2O造成的,靶材性能及溅射工艺缺陷都可能诱导毒化发生.
The poisoning phenomenon on the surface of ITO target during DC-Magnetron sputtering process was investigated. XRD, EPMA and LECO oxygen analyzer were used to study the poisoning mechanism and the factors leading to poisoning were analyzed. The result shows that In2O3 is decomposed into In2O and O2. This reaction on the surface of ITO target is the reason causing the poisoning phenomenon.
参考文献
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