The (Bi0.9Ho0.1)3.999Ti 2.997 V0.003O12 (BHTV) films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3+/V5+ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6°C/cm2, 2Ec of 265 kV/cm (at applied field of 420 kV/cm), dielectric constant of 305, dielectric loss of 0.031 (at 1 MHz), good insulting behavior, as well as the fatigue-free behavior.
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