通过740-820℃之间进行低温成相,分别在氩气和空气中LaAlO3（LAO）单晶基底上沉积得到了有较大应用前景的涂层导体SmBiO3（SBO）缓冲层.740-800℃所得的缓冲层c轴取向良好,致密、平整、无裂纹.当温度达到820℃时,SBO表面开始出现裂缝.SBO薄膜的相组成和微结构利用XRD和SEM进行分析.研究结果表明,在Ar气氛中和空气中适宜于SBO薄膜生长的最佳温度都在770-800℃附近,在此条件下可以制备出表面平整致密SBO薄膜.
Low annealing temperature processing has been achieved in the deposition of a potential SmBiO3（SBO） buffer layer on LaAlO3（LAO） single crystal substrate both in Ar and air.The temperature range as low as 740～820℃ was demonstrated to be appropriate to the epitaxial growth of SBO layer.Highly c-axis textured,dense,smooth and crack-free SBO layer has been obtained at 740～800℃.The SBO layer begins to crack when annealed at 820 ℃.the microstructure and phase composition of SBO film are characterized by using SEM and XRD.As results,the proper temperature both in Ar and air for the growth of SBO film is about 770～800℃,underwhich the dense and smooth SBO film can be well prepared.
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