对p-GaN/Ni/Au(5/10nm)界面处进行Pt+注入,注入后的样品在空气中快速热退火处理5min,发现金属电极和p-GaN的欧姆接触特性得到明显的改善,接触电阻率从101-Ω·cm2数量级降低到10-3Ω·cm2数量级.通过研究在不同Pt+注入剂量(5×1015、1×1016、2×1014cm-2)和退火温度下接触电阻率的变化规律.在Pt+注入剂量为1×1016cm-2,300℃空气氛围中退火得到了最低的接触电阻率,为3.55×10-3Ω·cm2.探讨了Pt+离子注入引起欧姆接触改善的内在机制.
Pt+ ions were implanted at the interface of p-GaN/Ni/Au (5/10nm), and then the sample was treated with rapid thermal annealing (RTA) in air for 5rain. The ohmic contact characteristics between the metal elec-trode and p-GaN got obviously improved, and the specific contact resistance (ρc) reduced from 10-1Ω·cm2 or-der to 10-3Ω·cm2 order. The effect of different implantation dose, i. e. 5 × 1015, 1 × 1016, 2 ×1016, and anneal temperature, i.e. 300,500,700℃, on ρc is investigated. The lowest ρc, i.e. 3. 555 × 10-3Ω ·cm2, is achieved after annealing in air at 300"(2 in air for 5min with 1 × 1016cm-2 Pt+ ion implantation. The corresponding mecha-nisms of the improvement of ohmic contacts by Pt+ ion implantation are discussed.
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