二氧化硅(SiO2)是制备高效晶体硅太阳电池常用的钝化手段.本文利用快速热氧化(RTO)技术在晶体硅表面制备超薄SiO2层,考察其对硅表面的钝化作用.在100％O2气氛下,900℃RTO处理180s,可以使样品的少子寿命达到146.6μs的最佳值.采用RTO方法制备的SiO2薄膜厚度可以控制在几个纳米范围.通过与等离子体增强化学气相沉积(PECVD)系统沉积的氮化硅(SiNx)薄膜形成叠层钝化膜,可以进一步提高对太阳电池表面的钝化效果.单层SiNx薄膜钝化的样品有效载流子寿命为51.67μs,SiO2/SiNx叠层薄膜钝化的样品有效载流子寿命提高到151.18μs.
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