The decays of transient photoconductivity and their light-induced changes of polymor-phous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well bya sum of two exponential decay functions, which indicates that there arc two kindsof traps contributing to the process. The light-induced changes of the concentrationand energy level of the traps were estimated. The results show that the light-inducedchanges in trap energy position Et, trap concentration Nt as well as photoconductivityare markedly less for pm-Si:H than that for a-Si:H.
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