采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Cu靶的方法在不同基底温度下制备了ZnO/Cu/ZnO多层膜.用X射线衍射仪、原子力显微镜、紫外可见分光光度计和四探针测试仪对样品的性能进行了表征.结果表明,随着基底温度的升高,ZnO层c轴择优取向明显,结晶程度变好,Cu层的结晶性先变好后逐渐变差;多层膜表面均方根粗糙度随基底温度的升高而增加;光学透过率随基底温度的升高逐渐增大,基底温度为300 ℃时最大透过率接近90%;面电阻随基底温度的升高逐渐增加,最小面电阻为12.4 Ω/□.
ZnO/Cu/ZnO multilayer films were prepared by RF sputtering of ZnO and DC sputtering of Cu target at different substrate temperature. The properties of ZnO/Cu/ZnO films characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), double-beam UV-spectrophotometer and four-point probe method. The results showed that the ZnO layers have a preferred c-axis orientation, as the substrate temperature increasing, the crystallinity of ZnO layers increases, the crystallinity of Cu layers increases initially and then decreases, the root mean square roughness increases, the transmittance increases. The max transmittance is near 90% when the substrate temperature reaches to 300 ℃. The sheet resistance increases with increase of substrate temperature, the minimum resistance is 12.4 Ω/□.
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