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  4. 基于相变存储器的相变存储材料的研究进展

材料导报, 2009, 23(15): 96-102.

基于相变存储器的相变存储材料的研究进展

汪昌州 1, , 翟继卫 2, , 姚熹 3,

1.同济大学功能材料研究所,上海,200092

2.同济大学功能材料研究所,上海,200092

3.同济大学功能材料研究所,上海,200092

基金项目:   国家高技术研究发展计划(863计划)(2008AA031402)  

关键词： 相变存储器 , 相变存储材料 , Ge2Sb2Te5

Research Progress on Phase Change Materials for Phase Change Memory

相变存储器具有非易失性、循环寿命长、元件尺寸小、功耗低、多级存储、与现有集成电路工艺相兼容等诸多优点,被认为是最具潜力的下一代存储器.简要介绍了相变存储材料的工作原理和对相变存储材料的性能要求,综述了近年来国内外在相变材料存储性能的优化、存储机理以及面临的关键问题等方面的最新研究成果,最后展望了相变存储材料的研究和发展趋势.

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