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本文从位错源开动条件和ν=c_0(τ/τ_0))~m的关系式出发,利用硅单晶中孤立位错运动的实验数据,计算模拟了在恒定应力作用下有源位错群的滑移运动,得出: 1.有源位错群中领先位错的运动速度(v_1)与孤立位错的运动速度(v_(iso))之比约等于1.36,这和实验结果比较接近。 2.在有源位错群中,位错的平均速度等于v_(iso)。 3.在有源位错群中,位错的平均密度与外加应力成正比,位错源产生位错的速率 dN/dt∝τ_α~(m+1)e~(-(Q/kT)

According to ν=c_0(τ/τ_0)~m and the condition of dislocation source operation, the glide motion of a dislocation group emitted from a source under a constant applied stress, is simulated on a computer by using experimental data of isolated dislocation velocity in silicon crystals. The following conclusion is obtained:1. The velocity of a leading dislocation in a group emitted from a source is approximately 1.36 times the velocity of an isolated dislocation. This result agrees with the experimental ones obtained in silicon crystals.2. The average velocity of all dislocations in a group emitted from a source, is equal to the velocity of an isolated dislocation.3. In a dislocation group emitted from a source, the average density of all dislocations, is proportional to τ_a, and the rate of generation of dislocations from a source is found to be:dN/dt∞τ_a~(m+1) e~(-Q/kT).