采用低压化学气相沉积法在6H-SiC衬底上成功地生长了高Ge、C组分的SiCGe薄膜,利用XPS和XRD对样品进行了综合测试分析,研究了SiCGe薄膜的组分和结构特征,讨论了XRD峰位与薄膜的组分结构的关系,为进一步改善薄膜的性能提供了依据.结合XPS和XRD综合分析可知, 薄膜中Ge、C组分高达30.86%和9.06%,确为SiCGe相,并不是SiGe和SiC的简单结合.测试发现,SiCGe多晶薄膜为立方结构,在〈110〉和〈310〉方向上择优生长.
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